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IRLU024NPBF MOSFET Power Electronics Reliable High-Performance MOSFETs for Power Management Description: The IRL U024NPBF is a N-channel MOSFET from International Rectifier. It is a logic level FET suitable for...
IR2136STRPBF MOSFET Power Electronics High Performance High Efficiency Power Solutions Product Description: The IR2136STRPBF is an N-Channel enhancement mode MOSFET ideal for high-side switching applications. I...
...maximum drain current of 30A, a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is constructed with a P-channel MOSFET with a fast sw...
...Power Electronics High Performance High Reliability Switching Solution The IRF1010EPBF is a high-density MOSFET transistor with a drain-source breakdown voltage of 100V and a maximum drain current of 10A. Th...
...Power Electronics High-Performance High-Reliability Solution for Your Applications Description: This is an advanced power MOSFET designed for use in a wide variety of switching applications. Parameters: • Dr...
IRF9640STRLPBF MOSFET High Power High Performance Power Electronics Solution This IRF9640STRLPBF MOSFET Transistor is a high-voltage, high-speed, low-on-resistance, N-channel MOSFET designed for use in switchin...
...Power Electronics for Automotive and Industrial Applications Description: The IRFR6215TRPBF is an N-channel power MOSFET with a fast switching speed, low on-resistance and low gate charge. It is specifically...
... MOSFET Power Electronics High Performance Switching and Controlling Solution Product Description: The IRFU9024NPBF is a N-channel enhancement mode power metal-oxide-semiconductor field-effect transistor (MO...
IRF9Z34NSTRLPBF MOSFET Power Electronics High Performance Reliable Power Control Product Features: - N-Channel Enhancement Mode - Ultra Low On-Resistance - High Input Impedance - Low Gate Threshold ......
...capable of high current handling and low on-state resistance, making it suitable for a variety of power supplies, DC-DC converters and other switching applications. Parameters: • Drain-Source Voltage: 600V •...
SI2301CDS-T1-GE3 MOSFET Power Electronics High Performance and Durable Solution for Power Applications Vishay SI2301CDS-T1-GE3 N-Channel MOSFET, 30V, 3.2A, 3.2 Ohm, 8-Pin SOT-23 Product Features: - ......
... other high-power applications. Its features include high blocking voltage with low on-resistance, low gate charge, fast switching, and temperature and avalanche ......
... voltage of 30V, a gate-source voltage of ±20V, a drain current of 61A, a drain-source on-state resistance of 0.312mΩ, and a maximum power dissipation of 85W. This MOSFET is ideal for high temperature and hi...
IRLML2803TRPBF MOSFET Power Electronics High Performance Low On-Resistance Enhanced Power Handling Product Overview: The IRLML2803TRPBF is a high-speed, logic level, N-channel MOSFET with a low RDS(on). This de...
SI7615ADN-T1-GE3 MOSFET Power Electronics High Voltage High Current Switching Power Supply Solutions Description: The SI7615ADN-T1-GE3 is a N-Channel MOSFET designed to provide superior performance in a wide ra...
IRF100B201 MOSFETs High Power High Efficiency Reliable Power Electronics Solutions IRF100B201 MOSFET Description: The IRF100B201 is a high-voltage, high-current MOSFET that has a drain-source breakdown voltage ...
...: -60V • Drain Current: -24A • Gate-Source Voltage: ±20V • On-Resistance: 0.045Ω • RDS(on): 0.045Ω • Input Capacitance: 488pF • Power Dissipation: 3W •...
...Power Electronics High-Performance High-Reliability Switching Solution Product Features: • N-channel MOSFET • 117A Continuous Drain Current at 25°C • 600V Drain-Source Breakdown Voltage • 4.5Ohms Maximum On-...
...Power Electronics for Automotive and Industrial Applications Product Features: - N-Channel MOSFET Transistor - Maximum Drain Source Voltage: 100V - Maximum Gate Source Voltage: ±20V - Maximum Drain Current: ...
...Power Electronics for Maximum Efficiency Product description: The IRFS4227TRLPBF is a high-performance, low-voltage, logic-level, N-channel Power MOSFET from International Rectifier. This device is suitable ...