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...Power MOSFET High Power MOSFET is an advanced type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a high power handling capacity and high frequency. It offers excellent performance, high ...
... to deliver exceptional performance with its high efficiency and high power capabilities, making it an ideal choice for a wide range of industrial and commercial applications. One of the key features of the ...
...efficiency. As a type N MOSFET, it is specifically tailored for applications where high power and high efficiency are crucial factors. One of the standout features of this high power MOSFET is its ability to...
...Power MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Product ...
...POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high...
...POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high...
...Power MOSFET SCT040HU65G3AG SIC Integrated Circuit Chip HU3PAK IC Chip Product Description Of SCT040HU65G3AG SCT040HU65G3AG improve application performance in frequency, energy efficiency, system size and w...
IPT004N03LATMA1 New Original IC Integrated Circuits Chip N Channel Power MOSFET Product Description Optimizedfore-fuseandORingapplication Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested Superiorthermal...
... Operation, the package is TO-247 (IXTH). Specification Of IXTH24N50L Part Number IXTH24N50L FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain...
... is 8-LFPAK, Surface Mount. Specification Of NTMJS1D4N06CLTWG Part Number NTMJS1D4N06CLTWG Technology MOSFET (Metal Oxide) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.3mOhm @ .....
1200V Silicon Carbide MSC017SMA120J N-Channel Power MOSFET Module SOT-227-4 Product Description Of MSC017SMA120J MSC017SMA120J is Silicon Carbide N-Channel Power MOSFET, 1200V, 17m SiC MOSFET in a SOT-227 pac...
.... Specification Of MSC080SMA120J Part Number: MSC080SMA120J Product: IGBT Silicon Carbide Modules Type: Power MOSFET Technology: SiC Vgs - Gate-Source Voltage: - 10 V, + 25 V Package / Case: SOT-227-4 Id - C...
...Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET – Power, Single N-Channel Transistors. Specification Of NTMFS005N10MCLT1G Part Number NTM...
Triple-Output AMOLED Display Power Supply Integrated Circuit IC Chip The SGM3836A is designed for powering AMOLEDdisplays which require VAVDD, VELVDD and VELVSS. Thedevice integrates two boost converters, VO1 f...
...Power MOSFET is a cutting-edge semiconductor device that offers exceptional performance and reliability for a wide range of applications. Designed to meet the demands of modern electronics, this High Power M...
...Power MOSFET is a cutting-edge semiconductor device designed to meet the demanding requirements of modern electronic applications. As a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), this produc...
... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of...
...Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These feat...
... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v...
... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of...