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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
STP65NF06 N-Channel Power MOSFET 60V 60A 110W (Tc) Through Hole Switching application Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based proc...
APW7302B 2A synchronous buck converter with inte-grated power MOSFETs General Description APW7302B is a 2A synchronous buck converter with inte- grated power MOSFETs. The APW7302B design with a current-mode con...
STP65NF06 N-Channel Power MOSFET 60V 60A 110W (Tc) Through Hole Switching application Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based proc...
... BSC004NE2LS5ATMA1 IC Integrated Circuits Chip N Channel Power MOSFET Product Description Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd) Specific components optimized...
... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v...
...MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power ...
...MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power ...
INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 dateco...
IXTH460P2 PolarP2 Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style...
IXTH460P2 PolarP2 Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style...
IXTH460P2 PolarP2 Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style...
IXTH460P2 PolarP2 Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style...
TC4420/TC4429 6A High-Speed MOSFET Drivers Features • Latch-Up Protected: Will Withstand >1.5A Reverse Output Current • Logic Input Will Withstand Negative Swing Up To 5V • ESD ......
... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to ......
...) @ Vgs 259 nC @ 10 V Vgs(th) (Max) @ Id 5V @ 3mA Operating Temperature -55°C ~ 150°C (TJ) Power Dissipation (Max) 595W (Tc)...
1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247...
...Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced proce...