| Sign In | Join Free | My burrillandco.com |
|
... Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 ......
IRFP260NPbF HEXFET® Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • ......
IRFR/U9120N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description ...
TC4428COA 1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS 12v led circuit board FEATURES High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V ...
TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected ..............
HJ44H11 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers o...
...power your electronic devices, then the IRFP460LC Power MOSFET might be just what you need. This high-performance transistor is ideal for use in a broad range of applications, from audio amplifiers to motor ...
FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C ...
... clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in...
...MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide r...
...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recover...
...Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may b...
...Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devi...
NTK3134NT1G Power MOSFET Transistor High Speed Switching Low On Resistance SOT-723 Package Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - ...
FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Cur...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • ......
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) ...
2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25, u...
...Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Dra...
... power transistor high power mosfet transistors Features ■ PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Isl...