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Operational Amplifier Power Mosfet Transistor / general purpose mosfet LM741H , 500 mW General Description The LM741 series are general purpose operational amplifiers which feature improved performance over ind...
The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and ...
...Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulti...
Product Detail IRF3205 also have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube P...
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MAX191BCWG+ 2338 MAXIM 16+ SOIC-24 MAX1932ETC+T 3044 MAXIM 13+ QFN MAX232EIDR 50000 TI 13+ SOP-16 MAX232IDW 9003 TI 11+ SOP-16 MAX253CSA+ 6562 MAXIM 14...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ I...
MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping MMBT4401LT1 SOT23 (PbFree) 3,000 / Tape...
SIC Integrated Circuit Chip SCT011H75G3AG Power MOSFET Transistors 750V H2PAK-7 Product Description Of SCT011H75G3AG SCT011H75G3AG is silicon carbide Power MOSFET device, 11.4 mOhm typ. Operating junction temp...
... Charge (Qg) (Max) @ Vgs 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V Power Dissipation (Max) 323W (Tc) Benefits Of...
N-Channel Power MOSFET Transistors MSC017SMA120B4 TO-247-4 Integrated Circuit Chip Product Description Of MSC017SMA120B4 MSC017SMA120B4 is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-247 pac...
Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V Power MOSFET IXFQ60N50P3 I D25 = 60A IXFH60N50P3 RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Ava...
Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MCIMX535DVV1C 1066 FREESCALE 14+ BGA MCIMX6S7CVM08AC 769 FREESCALE 16+ BGA MCP100T-270I/TT 68000 MICROCHIP 15+ SOT23-3 MCP100T-315I/TT 57000 MICROCHIP ...
M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL ......
M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL ......
FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This ad...
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fift...
...Mosfet Power Transistor MOSFET 60V, N-channel NexFET Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm P...