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Silicon NPN Power Transistors 2SC4927 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal ......
Silicon NPN Power Transistors 2SD1880 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built in damper diode APPLICATIONS ·......
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications Low noise : NF = 3dB (typ.) RG = 100 , VCE = 6 V, IC = 100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1...
TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Uni...
Transistors BSC004NE2LS5ATMA1 N-Channel Power MOSFETs Transistors 8-PowerTDFN Product Description Of BSC004NE2LS5ATMA1 BSC004NE2LS5ATMA1 is an OptiMOS 5 low-voltage power MOSFET 25V transistor in a SuperSO8 p...
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DM...
NPN switching transistors 2N2222; 2N2222A FEATURES High current (max. 800 mA) Low voltage (max. 40 V). APPLICATIONS Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 meta...
... SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power am...
... has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load switch · Battery protection Features · –5.3 A, ...
NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURE...
IRFP4229PbF PDP SWITCH Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sust...
SUD40N06-25L N-Channel 60-V (D-S), 175 MOSFET, Logic Level PRODUCT SUMMARY VDS (V) rDS(on) () ID (A)a 60 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 ABSOLUTE MAXIMUM RATINGS (TC=25 UNLESS OTHERWISE NOTED) P...
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS (2) ...
STW21NM60N N-CHANNEL 600V 0.19 - 17 A SECOND GENERATION MOSFET General Features 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The STx21NM60N is realiz...
SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET P...
...Power MOSFET Transistors 600V 8PowerVDFN Product Description Of STL24N60M6 STL24N60M6 is Single FETs Power MOSFET Transistors, Low gate input resistance, the Operating Temperature is -55°C ~ 150°C (TJ). Prod...
...Power MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specification Of NTMFD5C470NLT1...
1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to...
...Power MOSFET Transistors 8PowerVDFN Product Description Of STL33N60DM2 STL33N60DM2 high voltage N-channel Power MOSFET Transistors is part of the MDmesh™ DM2 fast recovery diode series. Specification Of STL...
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...