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Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic r...
...Memory Chips 48-TFBGA Package Static RAM high performance CMOS Static RAM 32Mbit Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 32Mbit Memory Organization 2M x 16 Memory I...
Quick Detail: 512-Mbit Double-Data-Rate SDRAM Description: The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a qu...
... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...
Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dy...
.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a writ...
... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications...
Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC Product Description Of MT53E768M64D4HJ-046 WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic r...
Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage dev...
...Memory featuring 90 nm MirrorBit Process Technology Description: The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page acces...
...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequen...
...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power suppl...
... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ......
...-power, high-performance Static Random Access Memory (SRAM) that features a 1.8V operating voltage and a 3V data retention voltage. It is available in 4Mb and 8Mb densities with a low-power ......
...Memory Chip Access line ultra-low-power 32-bit MCU ARM®-based Cortex®-M0+, up to 64 KB Flash, 8 KB SRAM Features Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 125 °C temperature range – 0....
... Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface ......
...-10ZSXI Flash Memory Chips 44-TSOP Package 1Mbit Static RAM Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mbit Memory Organization 64K x 16 Memory Interface Parallel Wri...
...Flash Memory Chips 32-BSOJ Package High Performance CMOS Static RAM Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mbit Memory Organization 128K x 8 Memory Interface Para...