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Ram Random Access Memory

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Total 15076 products for ram random access memory Manufacture & Suppliers

FM1608-120 - Ramtron International Corporation - 64Kb Bytewide FRAM Memory

...64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in o...

Mega Source Elec.Limited
China

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Sunmi D3 Pro Android POS Systems Terminal Machine 4GB RAM 64GB ROM Memory For Optimal Processing

Product Description: One of the key features of this terminal is its Terminal Management System (TMS), which allows businesses to easily manage and monitor their terminals remotely. This makes it easy to keep t...

Guangzhou HeiMi Information Technology Co., Ltd.
Guangdong,China

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All In One POS Terminal 58mm Printer Paper Width 3GB RAM 32GB ROM Memory All-In-One Device For Business

Product Description: The POS Terminal is a versatile electronic device designed to streamline transactions and enhance customer service in various business settings. With a sleek 6-inch screen display, this And...

Guangzhou HeiMi Information Technology Co., Ltd.
Guangdong,China

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AS7C34098A-10JIN IC SRAM 4MBIT PARALLEL 44SOJ Alliance Memory, Inc.

...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C256B-15PIN IC SRAM 256KBIT PARALLEL 28DIP Alliance Memory, Inc.

... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C1024B-12TJCN IC SRAM 1MBIT PARALLEL 32SOJ Alliance Memory, Inc.

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C1024B-12JCN IC SRAM 1MBIT PARALLEL 32SOJ Alliance Memory, Inc.

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...

Sanhuang electronics (Hong Kong) Co., Limited
China

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FM24CL64B-GTR 64Kb Serial F-RAM with Unlimited Endurance 150ns No-Write-Delay 1MHz I2C Interface 10^14 Read/Write Cycles Low-Power Operation 3.3V Supply and 40-Year Data Retention

... 64Kb Serial F-RAM with Unlimited Endurance 150ns No-Write-Delay 1MHz I2C Interface 10^14 Read/Write Cycles Low-Power Operation 3.3V Supply and 40-Year Data Retention Features ■ 64-Kbit ferroelectric random ...

TOP Electronic Industry Co., Ltd.
China

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FM25CL64B-GTR 64Kb Serial F-RAM with 20MHz SPI No-Delay Writes 10^14 Endurance 151-Year Data Retention 2.0-3.6V Operation -40°C to +85°C and Small SOIC Package

... memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data ......

TOP Electronic Industry Co., Ltd.
China

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Rugged Outdoor Mobile RFID Reader With 1D 2D Barcode Scanner 2G RAM 16G ROM Memory

Rugged Outdoor Mobile RFID Reader with 1D 2D Barcode Scanner Long Range Reading Fast Scanner Application Industry Logistics & Express Animal tracking & research Electric meter readings Storage & Distribution Pe...

Beijing Speedata Technology Co., Ltd
Beijing,China

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Memory IC Chip MT41K256M16TW-107 XIT:P 8Gbit SDRAM Mobile LPDDR4 Memory IC FBGA-96

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM25V10-GTR IC Chip Non Volatile Memory High Performance Data Storage

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AS7C316098A-10BIN IC SRAM 16MBIT PARALLEL 48TFBGA Alliance Memory, Inc.

...memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C256A-10TCN IC SRAM 256KBIT PAR 28TSOP I Alliance Memory, Inc.

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C256A-12JCN IC SRAM 256KBIT PARALLEL 28SOJ Alliance Memory, Inc.

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C4096A-12JIN IC SRAM 4MBIT PARALLEL 36SOJ Alliance Memory, Inc.

... is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple i...

Sanhuang electronics (Hong Kong) Co., Limited
China

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M29W640FB70N6E Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...

ChongMing Group (HK) Int'l Co., Ltd
China

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Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips

Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips Product Description Of MT53E256M16D1FW-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-sp...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AS6C4016-55ZIN IC SRAM 4MBIT PARALLEL 44TSOP II Alliance Memory, Inc.

..., high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA(TYP.) Standby curren...

Sanhuang electronics (Hong Kong) Co., Limited
China

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Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP

Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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