| Sign In | Join Free | My burrillandco.com |
|
...Memory IC Chip 8Gbit DDR4 Synchronous Dynamic Random Access Memory FBGA96 Product Description Of CXDQ3BFAM-CQ-A CXDQ3BFAM-CQ-A is 8Gbit DDR4 Synchronous Dynamic Random Access Memory (SDRAM) in FBGA-96 packa...
...64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in o...
H5AG46DXNDX117R Memory IC Chip 16Gbit DDR4 Dynamic Random Access Memory Chip Product Description Of H5AG46DXNDX117R H5AG46DXNDX117R is DDR4 Dynamic Random Access Memory (DRAM) chip, it primarily used for compu...
... 64Kb Serial F-RAM with Unlimited Endurance 150ns No-Write-Delay 1MHz I2C Interface 10^14 Read/Write Cycles Low-Power Operation 3.3V Supply and 40-Year Data Retention Features ■ 64-Kbit ferroelectric random ...
... ferroelectric random access memory (F-RAM) logically organized as 8K andtimes; 8 andnbsp; ❐ High-endurance 100 trillion (1014) read/writes andnbsp; ❐ 151-year ......
...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and...
... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time ...
... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...
... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...
Rugged Outdoor Mobile RFID Reader with 1D 2D Barcode Scanner Long Range Reading Fast Scanner Application Industry Logistics & Express Animal tracking & research Electric meter readings Storage & Distribution Pe...
.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C...
... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice...
...Memory IC Chip 2Gbit DDR3L SDRAM Memory Chip FBGA96 Product Description Of MT41K128M16JT-125 IT:K MT41K128M16JT-125 IT:K is a 2Gbit capacity DDR3L Synchronous Dynamic Random‑Access Memory (SDRAM) in an FBGA-...
... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...
...memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • ......
...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ......
...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ......
... is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple i...
... – Page Width: 4 words – Page Access: 25 ns – Random Access: 60 ns, 70 ns, 90 ns ■ Fast Program commands – 2 word/4 byte Program (without VPP=12 V) – 4 word/8 ......