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Random Access Analyzer

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Total 460 products for random access analyzer Manufacture & Suppliers

MX30LF1G08AA-TI Flash Memory Chip High Speed Low Power Storage Capacity

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a writ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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MT46V16M16P-5B:M Flash Memory Chips 45 Bytes of Non Volatile Storage Capacity

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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IC Chip ADAU1860BCBZRL 24 Bit Audio Interface Codec IC 56-UFBGA Package

...h a large on-chip static random-access memory (SRAM), multiple internal buses that eliminate input/output (I/O) bottlenecks, and innovative digital audio interfaces (DAI). Product ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount

... CY15B104QI-20LPXC Surface Mount Product Description Of CY15B104QI-20LPXC CY15B104QI-20LPXC ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specific...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MT25QL02GCBB8E12-0AAT 2Gbit SPI 133 MHz Memory IC

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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F-RAM Flash Memory Chip FM25CL64B-GTR Low Power Consumption 64Kb Serial 3V

... random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the ......

ChongMing Group (HK) Int'l Co., Ltd
China

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FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the ......

ChongMing Group (HK) Int'l Co., Ltd
China

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MT41J128M16HA-15E:D TR ic chip programmer 1Gb x4 x8 x16 DDR3 SDRAM

Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Features �� VDD = VDDQ = +1.5V ��0.075V �� 1.5V center-terminated push/pull I...

ChongMing Group (HK) Int'l Co., Ltd
China

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MT48LC4M16A2TG-75 IT:G TR Synchronous Dram IC MICRON TSOP4 Meg X 4 X 4 Banks

...4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous...

ChongMing Group (HK) Int'l Co., Ltd
China

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AB 2711P-RP8A 160VA PanelView Plus 6 operator terminals

... Plus 6 operator terminals. This logic module is compatible for PanelView Plus 6 700-1500 operator terminals. It has a Random Access Memory (RAM) amounting to 512 MB and Flash memory amounting to 512 MB. Thi...

Wisdomlong Technology CO.，LTD
China

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MX29GL320EHT2I-70G IC FLASH 32MBIT PARALLEL 56TSOP Macronix

.... MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-pin SOP. It is designed to be reprogrammed and er...

Sanhuang electronics (Hong Kong) Co., Limited
China

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IS42S16400J-7TL IC DRAM 64MBIT PAR 54TSOP II ISSI, Integrated Silicon Solution Inc

Product Details Description The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM wit...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MT48LC16M16A2P-6A:G TR IC DRAM 256MBIT PAR 54TSOP II Micron Technology Inc.

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MT48LC16M16A2B4-7E IT:G IC DRAM 256MBIT PAR 54VFBGA Micron Technology Inc.

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (...

Sanhuang electronics (Hong Kong) Co., Limited
China

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FM24CL16B-GTR IC FRAM 16KBIT I2C 1MHZ 8SOIC Infineon Technologies

...ails Description The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words �� 4 banks �� 16 bits. Using pipelined architecture and ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W949D2DBJX5I IC DRAM 512MBIT PAR 90VFBGA Winbond Electronics

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words �� 4 banks �� 16 bits. Using pipelined architecture and ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

Product Details GENERAL DESCRIPTION The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 con...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS4C2M32SA-6TCN IC DRAM 64MBIT PAR 86TSOP II Alliance Memory, Inc.

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanc...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MX29GL256FHXFI-90Q IC FLSH 256MBIT PARALLEL 64LFBGA Macronix

.... MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-pin SOP. It is designed to be reprogrammed and er...

Sanhuang electronics (Hong Kong) Co., Limited
China

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