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Random Access Analyzer

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Total 410 products for random access analyzer Manufacture & Suppliers

W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words �� 4 banks �� 16 bits. Using pipelined architecture and ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W949D2DBJX5I IC DRAM 512MBIT PAR 90VFBGA Winbond Electronics

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words �� 4 banks �� 16 bits. Using pipelined architecture and ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

Product Details GENERAL DESCRIPTION The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 con...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS4C2M32SA-6TCN IC DRAM 64MBIT PAR 86TSOP II Alliance Memory, Inc.

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanc...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MX29GL256FHXFI-90Q IC FLSH 256MBIT PARALLEL 64LFBGA Macronix

.... MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-pin SOP. It is designed to be reprogrammed and er...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W9812G6KH-6 IC DRAM 128MBIT PAR 54TSOP II Winbond Electronics

Product Details Description W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. W9812G6KH delivers a data bandwidth of up to 200M words per sec...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W9464G6KH-5 IC DRAM 64MBIT PAR 66TSOP II Winbond Electronics

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words �� 4 banks �� 16 bits. Using pipelined architecture and ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP

... SDRAM Memory IC 54-TSOP Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a da...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E2G32D4DT-046 WT:A Automotive SDRAM Mobile LPDDR4 Memory IC

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E384M32D2FW-046 WT:E 12Gbit Parallel 2.133 GHz LPDDR4 Memory IC

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E256M32D2DS-053 WT:B 8Gbit SDRAM-Mobile LPDDR4 Memory Chips

... Memory Chips. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Each of the x16’s 536...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E256M16D1DS-046 WT:B 4Gbit SDRAM Mobile LPDDR4 Memory IC VFBGA-200

... Description Of MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046 WT:B is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M16D1...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips

...-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-speed CMOS, dynamic random-access memory. Specification Of MT53E256M16D1FW-046 WT:B Memory Type Volatile Memory Format...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MT53E2G32D4DE-046 WT:A Memory IC Chip 64Gbit Parallel 2.133 GHz 3.5 ns Memory

...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E384M32D2DS-053 AUT:E 12Gbit 1.866 GHz LPDDR4 Memory

... Of MT53E384M32D2DS-053 AUT:E MT53E384M32D2DS-053 AUT:E 12Gb Low Power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. Specification Of MT53E384M32D2DS-053 AUT:E Memory Type Volatile Memory...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory

...-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Sp...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC

... WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device. Optimized to address power consumption in battery-powered applications, this memor...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC

... Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Spe...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G64D4SP-046 WT:C 64 Gbit SDRAM - LPDDR4 Memory IC

... CMOS dynamic random access memory. The memory device is designed in multi-chip package (MCP) and package stack (PoP) to save PCB space. The LPDDR4 ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G64D4NW-046 WT:C 64 Gbit SDRAM LPDDR4 Memory IC 432-VFBGA

... Of MT53E1G64D4NW-046 WT:C MT53E1G64D4NW-046 WT:C 64Gb low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. These memory devices are designed in multi-chip packages (MCP) and package s...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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