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Product Details Description W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. W9812G6KH delivers a data bandwidth of up to 200M words per sec...
Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words 4 banks 16 bits. Using pipelined architecture and ...
... SDRAM Memory IC 54-TSOP Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a da...
... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory ......
... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% ......
... Memory Chips. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Each of the x16’s 536...
... Description Of MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046 WT:B is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M16D1...
...-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-speed CMOS, dynamic random-access memory. Specification Of MT53E256M16D1FW-046 WT:B Memory Type Volatile Memory Format...
...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB ......
... Of MT53E384M32D2DS-053 AUT:E MT53E384M32D2DS-053 AUT:E 12Gb Low Power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. Specification Of MT53E384M32D2DS-053 AUT:E Memory Type Volatile Memory...
...-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Sp...
... WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device. Optimized to address power consumption in battery-powered applications, this memor...
... Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Spe...
... CMOS dynamic random access memory. The memory device is designed in multi-chip package (MCP) and package stack (PoP) to save PCB space. The LPDDR4 ......
... Of MT53E1G64D4NW-046 WT:C MT53E1G64D4NW-046 WT:C 64Gb low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. These memory devices are designed in multi-chip packages (MCP) and package s...
...-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dynamic random access storage device. The memory device is optimized to solve power consumption problems in battery-...
...-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered appli...
... Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applicat...
... a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes ......
... for controller modules such as CPE305 and CPE310. It is mainly used to provide power during power loss, sufficient enough to enable the CPU to transfer the contents of the Random Access Memory (RAM) to the ...