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Total 38440 products for rf power transistor Manufacture & Suppliers

SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE �� Switching and Amplification in High Voltage �� Applications such as Telephony �� Low Current �� High Voltage ORDERING INFORMATION Part Number...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperatur...

Walton Electronics Co., Ltd.
China

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SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE �� Switching and Amplification in High Voltage �� Applications such as Telephony �� Low Current �� High Voltage ORDERING INFORMATION Part Number...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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MMBT4401 SOT-23 Tip Power Transistors Fast Switching Emitter Base Voltage 6 V

...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitt...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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D882S NPN Tip Power Transistors TO-92 Plastic Encapsulated Transistors

TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN) FEATURE Power dissipation MARKING D882=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE, ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE Power dissipation MARKING A733=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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D882 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 30v

TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

...Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

...Transistors FMMT591 TRANSISTOR (PNP) FEATURE Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Colle...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

...Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitt...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperatur...

Walton Electronics Co., Ltd.
China

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ULN2003APWR HIGH-VOLTAGE HIGH-CURRENT DARLICM GROUPON TRANSISTOR ARRAY testing power transistors

... description/ordering information The ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current DarliCM GROUPon transistor arrays. Each...

ChongMing Group (HK) Int'l Co., Ltd
China

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SMA Female RF Power Divider SMA Splitter 4 Way 8000MHz To 23000MHz

8000-23000MHz SMA-Female 4 Way RF Power Divider Splitter 1. RoHS compliant and ISO9001:2015 Certificate 2. Various Size & Wide Frequency 3. Advanced manufacture and surface plating 4. Specifications can be made...

Charter Leader Precision Electronic Co.,Ltd
China

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SMA Female RF Power Divider SMA Splitter 4 Way 8000MHz To 23000MHz

8000-23000MHz SMA-Female 4 Way RF Power Divider Splitter 1. RoHS compliant and ISO9001:2015 Certificate 2. Various Size & Wide Frequency 3. Advanced manufacture and surface plating 4. Specifications can be made...

Charter Leader Precision Electronic Co.,Ltd
China

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4-12 GHz 100W CW High Frequency RF Power Amplifier for electronic warfare, and other specialized RF System

...RF Power Amplifier for electronic warfare, and other specialized RF System Description This specific introduction pertains to a 100W continuous wave (CW) high-frequency RF power amplifier operating in the 4-...

Nanjing Shinewave Technology Co., Ltd.
China

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High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A

IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors Description 1200 V, 25 A IGBT discrete with an...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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IKW30N60H3 Field Stop IGBT Power Transistor 600V 30A 187W Low EMI

IKW30N60H3 IK30N60H3FKSA1 IKW75N65ES5 IKW75N65EH5 Insulated Gate Bipolar Transistor Applications ��uninterruptiblepowersupplies ��weldingconverters ��converterswithhighswitchingfrequency Specifications Product Att...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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