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Total 5411 products for silicon carbide formula Manufacture & Suppliers

SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot High Hardness Ingot

SiC Ingot, Silicon Carbide Ingot, SiC raw Ingot, Silicon Carbide raw Ingot, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About 4H-N SiC Ingot - suppor...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4H-P Silicon Carbide SiC Substrate 4 Inch SIC Wafer 6H-P For III-V Nitride Deposition

SiC Substrate, Silicon Carbide Substrate, SiC raw Substrate, Silicon Carbide raw Substrate, Prime Grade, Dummy Grade, 4H-P SiC Substrate, 6H-P SiC Substrate, 3C-N SiC 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC,...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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6H-P Silicon Carbide SiC Substrate 6 Inch SIC Wafer 4H-P For Optoelectronic Devices

SiC Substrate, Silicon Carbide Substrate, SiC raw Substrate, Silicon Carbide raw Substrate, Prime Grade, Dummy Grade, 4H-P SiC Substrate, 6H-P SiC Substrate, 3C-N SiC 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC,...

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Shanghai,China

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Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350μm Zero Grade Dummy Grade

Product Description: Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350��m Zero Grade Dummy Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal...

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Shanghai,China

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6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

Product Description: 6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications and radar systems Diameter 150mm Prime Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material wit...

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Shanghai,China

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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

Product Description: Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350��m For High-power Devices 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

Product Description: 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-tem...

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Shanghai,China

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4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

Product Description: 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-...

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Shanghai,China

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6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade

Product Description: 6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade 4H-P silicon carbide (SiC) is an important semiconductor material comm...

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Shanghai,China

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Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics

Product Description: Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature,...

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Shanghai,China

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SiC Seed Wafer 8inch Thickness 600±50um 4H Type Production Grade For Silicon Carbide Crystal Growth

... thickness 600±50um 4H type production grade for Silicon carbide crystal growth SiC seed wafer's abstract SiC seed wafers are critical in the production of high-quality silicon carbide (SiC) crystals. These ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade

Product Description: 2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good e...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Product Description: Silicon Carbide Substrate 4" Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good electrical a...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems

Product Description: Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with goo...

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Shanghai,China

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5*5mm/10*10mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

Product Description: 5*5mm/10*10mm Silicon Carbide Wafer Thickness 350��m Sic 3C-N Type High Mechanical Strength Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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6Inch Silicon Carbide Semi-insulating SiC Composite Substrate P Type N Type Single Polish Double Polish Production Grade

Product Description: 6Inch Silicon Carbide Semi-insulating SiC Composite Substrate P Type N Type Single Polish Double Polish Production Grade Semi-Insulating Silicon Carbide (SiC) composite substrate wafers are...

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Shanghai,China

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12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication

Product Description: 12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication The 12inch silicon carbide substrate is an important innovation ...

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Shanghai,China

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Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices

Product Description: Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and ...

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Shanghai,China

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Silicon Carbide Formula

Total 5411 products for silicon carbide formula Manufacture & Suppliers

SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot High Hardness Ingot

4H-P Silicon Carbide SiC Substrate 4 Inch SIC Wafer 6H-P For III-V Nitride Deposition

6H-P Silicon Carbide SiC Substrate 6 Inch SIC Wafer 4H-P For Optoelectronic Devices

Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350μm Zero Grade Dummy Grade

6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade

Sic Silicon Carbide Wafer 55mm/1010mm 4H-P Type Production Grade For Power Electronics

SiC Seed Wafer 8inch Thickness 600±50um 4H Type Production Grade For Silicon Carbide Crystal Growth

2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade

Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems

55mm/1010mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

6Inch Silicon Carbide Semi-insulating SiC Composite Substrate P Type N Type Single Polish Double Polish Production Grade

12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication

Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices