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Static Random Access Memory

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Total 2977 products for static random access memory Manufacture & Suppliers

S29GL01GS10FHI010 Memory IC Chip 1Gbit Parallel MIRRORBIT™ Eclipse NOR Flash Memory IC

... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM24C256-SE - Ramtron International Corporation - 256Kb FRAM Serial Memory

...Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes lik...

Mega Source Elec.Limited
China

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AM28F010-90PC - Advanced Micro Devices - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

...memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erase...

Mega Source Elec.Limited
China

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MX29LV040TC-55 - Macronix International - 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY

...EQUAL SECTOR FLASH MEMORY Description: The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile ra...

Mega Source Elec.Limited
China

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FM25L256-G EMMC Memory Chips 256 Kbit

... memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems c...

Walton Electronics Co., Ltd.
China

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FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ......

ChongMing Group (HK) Int'l Co., Ltd
China

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MT41K128M16JT-125 IT:K High Performance Flash Memory Chips Unbeatable Speed and Reliability

...: TSOP • VDD: 1.8V • Operating Temperature: -40C to +85C • Organization: x16 • Features: low latency, high speed random access, fast read and write times, high reliability and endurance • Access Time: 20ns W...

Shenzhen Sai Collie Technology Co., Ltd.
China

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FM1608-120 - Ramtron International Corporation - 64Kb Bytewide FRAM Memory

Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but op...

Mega Source Elec.Limited
China

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F-RAM Flash Memory Chip FM25CL64B-GTR Low Power Consumption 64Kb Serial 3V

... random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, ......

ChongMing Group (HK) Int'l Co., Ltd
China

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AS4C2M32SA-6TCN IC DRAM 64MBIT PAR 86TSOP II Alliance Memory, Inc.

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanc...

Sanhuang electronics (Hong Kong) Co., Limited
China

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Flash Memory IC Chip MT4LC4M16R6TG-5 - Micron Technology - DRAM

...-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4...

Mega Source Elec.Limited
China

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MX29LV640EBTI-70G Flash Memory Chips - High Speed, Low Power Consumption for Data Storage

...Memory Chips Product Features: - 70nm process technology - 4M-bit capacity (512K x 8) - Low voltage operation: 1.65 to 1.95V - Access time: 70ns (max) - Single power supply - Fast page mode operation up to 3...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Integrated Circuit Chip MT25QU01GBBB8E12-0SIT 24-TBGA FLASH - NOR Memory IC

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR i...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic r...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Flash Memory IC Chip HYB25DC512160DE-5 - Qimonda AG - 512-Mbit Double-Data-Rate SDRAM

Quick Detail: 512-Mbit Double-Data-Rate SDRAM Description: The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a qu...

Mega Source Elec.Limited
China

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M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...

Anterwell Technology Ltd.
Guangdong,China

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Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dy...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MX30LF1G08AA-TI Flash Memory Chip High Speed Low Power Storage Capacity

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a writ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Memory IC Chip MT53E2G32D4DT-046 WT:A Automotive SDRAM Mobile LPDDR4 Memory IC

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC

Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC Product Description Of MT53E768M64D4HJ-046 WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic r...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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