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Total 2873 products for static random access memory Manufacture & Suppliers

MX29LV640EBTI-70G Flash Memory Chips - High Speed, Low Power Consumption for Data Storage

...Memory Chips Product Features: - 70nm process technology - 4M-bit capacity (512K x 8) - Low voltage operation: 1.65 to 1.95V - Access time: 70ns (max) - Single power supply - Fast page mode operation up to 3...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Integrated Circuit Chip MT25QU01GBBB8E12-0SIT 24-TBGA FLASH - NOR Memory IC

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR i...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic r...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...

Anterwell Technology Ltd.
Guangdong,China

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Flash Memory IC Chip HYB25DC512160DE-5 - Qimonda AG - 512-Mbit Double-Data-Rate SDRAM

Quick Detail: 512-Mbit Double-Data-Rate SDRAM Description: The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a qu...

Mega Source Elec.Limited
China

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Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dy...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MX30LF1G08AA-TI Flash Memory Chip High Speed Low Power Storage Capacity

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a writ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Memory IC Chip MT53E2G32D4DT-046 WT:A Automotive SDRAM Mobile LPDDR4 Memory IC

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MT53E2G32D4DE-046 WT:A Memory IC Chip 64Gbit Parallel 2.133 GHz 3.5 ns Memory

...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. Typical applications ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC

Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC Product Description Of MT53E768M64D4HJ-046 WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic r...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage dev...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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S29GL512P12TFIV20 - SPANSION - 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory

...Memory featuring 90 nm MirrorBit Process Technology Description: The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page acces...

Mega Source Elec.Limited
China

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Integrated Circuit Chip MT25QL02GCBB8E12-0AAT 2Gbit SPI 133 MHz Memory IC

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequen...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp and 8-lead TSSOP

... I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp andamp; 8-lead TSSOP andnbsp; Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically...

TOP Electronic Industry Co., Ltd.
China

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933MHz Integrated Circuit Chip MT41K512M16VRN-107 IT:P 8Gbit Memory IC 96FBGA

... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM25V10-GTR IC Chip Non Volatile Memory High Performance Data Storage

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IC FM24W256-G Replace EEPROM Memory FRAM IC SOP8 256k Integrated Circuits Electronic Component New and original IC

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 ye...

Shenzhen Quanyuantong Electronics Co., Ltd.

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MOC3052 Electronics Components 6 Pin DIP Random Phase Optoisolators Triac Drivers

...Random Phase Optoisolators Triac Drivers The MOC3051 Series consists of a GaAs infrared LED optically coupled to a non–Zero–crossing silicon bilateral AC switch (triac). The MOC3051 Series isolates low volta...

ChongMing Group (HK) Int'l Co., Ltd
China

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CY7C1061G30-10ZSXI Flash Memory Chips 54-TSOP Package High speed Static RAM with Error-Correcting Code (ECC)

... Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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CY7C1021DV33-10ZSXI Flash Memory Chips 44-TSOP Package 1Mbit Static RAM

...-10ZSXI Flash Memory Chips 44-TSOP Package 1Mbit Static RAM Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mbit Memory Organization 64K x 16 Memory Interface Parallel Wri...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Static Random Access Memory

Total 2873 products for static random access memory Manufacture & Suppliers

MX29LV640EBTI-70G Flash Memory Chips - High Speed, Low Power Consumption for Data Storage

Integrated Circuit Chip MT25QU01GBBB8E12-0SIT 24-TBGA FLASH - NOR Memory IC

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory

M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

Flash Memory IC Chip HYB25DC512160DE-5 - Qimonda AG - 512-Mbit Double-Data-Rate SDRAM

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount

MX30LF1G08AA-TI Flash Memory Chip High Speed Low Power Storage Capacity

Memory IC Chip MT53E2G32D4DT-046 WT:A Automotive SDRAM Mobile LPDDR4 Memory IC

MT53E2G32D4DE-046 WT:A Memory IC Chip 64Gbit Parallel 2.133 GHz 3.5 ns Memory

Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount

S29GL512P12TFIV20 - SPANSION - 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory

Integrated Circuit Chip MT25QL02GCBB8E12-0AAT 2Gbit SPI 133 MHz Memory IC

FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp and 8-lead TSSOP

933MHz Integrated Circuit Chip MT41K512M16VRN-107 IT:P 8Gbit Memory IC 96FBGA

FM25V10-GTR IC Chip Non Volatile Memory High Performance Data Storage

IC FM24W256-G Replace EEPROM Memory FRAM IC SOP8 256k Integrated Circuits Electronic Component New and original IC

MOC3052 Electronics Components 6 Pin DIP Random Phase Optoisolators Triac Drivers

CY7C1061G30-10ZSXI Flash Memory Chips 54-TSOP Package High speed Static RAM with Error-Correcting Code (ECC)

CY7C1021DV33-10ZSXI Flash Memory Chips 44-TSOP Package 1Mbit Static RAM