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Static Random Access Memory

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Total 2873 products for static random access memory Manufacture & Suppliers

8Gbit Memory Chip MT40A512M16LY-062E AUT:E Integrated Circuit Chip 96FBGA IC Chip

8Gbit Memory Chip MT40A512M16LY-062E AUT:E Integrated Circuit Chip 96FBGA IC Chip Product Description Of MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E The DDR4 SDRAM is a high-speed dynamic random-access m...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC

... Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC Product Description Of MT40A1G16KH-062E AIT:E MT40A1G16KH-062E AIT:E is a high-speed dynamic random-access memory internally configured as an ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount

4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount Product Description Of CY15B104QI-20LPXC CY15B104QI-20LPXC ferroelectric random access memory or F-RAM is nonvolatile and performs re...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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CXDB4CBAM-ML-A Memory IC Chip 8Gbit LPDDR4/4X Ultra-Low Power Double Data Rate DRAM

CXDB4CBAM-ML-A Memory IC Chip 8Gbit LPDDR4/4X Ultra-Low Power Double Data Rate Dynamic Random Access Memory [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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256Mbit Integrated Circuit Chip S29GL256S90DHI020 FLASH NOR Memory IC FBGA64

...Memory IC FBGA64 Product Description Of S29GL256S90DHI020 S29GL256S90DHI020 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. S29GL256S90DHI020 offer a fast page access time as fa...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AT24CS08-STUM-T 8 Kbit Serial EEPROM Memory for High Performance Data Storage

...Memory for High Performance Data Storage Product Description: The AT24CS08-STUM-T is a Flash Memory chip that provides 8-Kbit of memory in a small, low-power 8-pin package. It features an I2C® serial interfa...

Shenzhen Sai Collie Technology Co., Ltd.
China

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S29GL256S10DHB023 Memory IC Chip 256 Mbit NOR Flash Memory FBGA-64 Package

... technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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S29GL01GS10FHI010 Memory IC Chip 1Gbit Parallel MIRRORBIT™ Eclipse NOR Flash Memory IC

... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM24C256-SE - Ramtron International Corporation - 256Kb FRAM Serial Memory

...Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes lik...

Mega Source Elec.Limited
China

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AM28F010-90PC - Advanced Micro Devices - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

...memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erase...

Mega Source Elec.Limited
China

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MX29LV040TC-55 - Macronix International - 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY

...EQUAL SECTOR FLASH MEMORY Description: The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile ra...

Mega Source Elec.Limited
China

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FM25L256-G EMMC Memory Chips 256 Kbit

... memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems c...

Walton Electronics Co., Ltd.
China

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8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

Dynamic Random Access Memory DRAM 8Gb C-die DDR4 SDRAM K4A8G165WC-BITD JEDEC standard 1.2V(1.14V-1.26V) VDDo = 1.2V(1.14V-1.......

Shenzhen Filetti Technology Co., LTD
China

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Industrial DRAM Memory Chip DDR3l DDR3L X16 2Gb F60C1A0002-M69W

Dynamic Random Access Memory DRAM IndustrialDDR3l DDR3Lx16 2Gb F60C1A0002-M69W Device Features Density: 2G bits Organization 128Meg x 16 bits ......

Shenzhen Filetti Technology Co., LTD
China

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FBGA-200 DRAM Memory Chip 8Gb X16 X2 Channel LPDDR4X IS43LQ32256B-062BLI

Dynamic Random Access Memory DRAM 8Gb x16 x2 channel Mobile LPDDR4/LPDDR4X IS43LQ32256B-062BLI FEATURES • Configuration: - 256Mb x16 x 2 channels - 8 ......

Shenzhen Filetti Technology Co., LTD
China

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MT41K128M16JT-125 IT:K High Performance Flash Memory Chips Unbeatable Speed and Reliability

...: TSOP • VDD: 1.8V • Operating Temperature: -40C to +85C • Organization: x16 • Features: low latency, high speed random access, fast read and write times, high reliability and endurance • Access Time: 20ns W...

Shenzhen Sai Collie Technology Co., Ltd.
China

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FM1608-120 - Ramtron International Corporation - 64Kb Bytewide FRAM Memory

Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but op...

Mega Source Elec.Limited
China

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CY62256NLL-55SNXIT 256Kbit 32K x 8 Static RAM Memory IC Chip with 55 ns Access Time

...-55SNXIT Memory IC Chip 256Kbit Static RAM Asynchronous Memory IC SOIC28 Product Description Of CY62256NLL-55SNXIT CY62256NLL-55SNXIT is a high performance CMOS static RAM Asynchronous Memory IC, organized a...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AS4C2M32SA-6TCN IC DRAM 64MBIT PAR 86TSOP II Alliance Memory, Inc.

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanc...

Sanhuang electronics (Hong Kong) Co., Limited
China

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Flash Memory IC Chip MT4LC4M16R6TG-5 - Micron Technology - DRAM

...-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4...

Mega Source Elec.Limited
China

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