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Plastic waterproof junction box can be customized with holes Monitor the power junction box PC(polycarbonate) : material performance impact strength is high, good dimensional stability, colorless and transparen...
...instrument boxes, electronic product enclosures, power supply units, temperature control boxes, etc. It is made of high-quality ABS, has strong impact resistance and good electrical insulation, is moisture-....
...Holes IP65 Plastic Abs Waterproof Junction Box With PVC Stoppers With Knockouts Product Description 200x200x80mm This product is suitable for junction boxes, instrument boxes, electronic product enclosures, ...
... boxes, electronic product enclosures, power supply units, temperature control boxes, etc. It is made of high-quality ABS, has strong impact resistance and good electrical insulation, is moisture-......
... component in industrial automation, primarily used for signal distribution, power management, and device interconnection. Industrial junction boxes are widely used to connect various sensors, actuators, PLC...
...high voltage capacitive divider 2 holes indicator sensor Capacitor VoltageDividerAssembly CD-10kV-M24 Electrical Characteristics Voltage Division Ratio: 10kV/√ 3, 3.25V/√ 3 Temperature Characteristic: -40℃~7...
... epoxy resin capacitive divider insulator sensor 4 holes CapacitorVoltageDivider CD-10kV-M1 Electrical Characteristics Voltage Division Ratio: 10kV/√ 3 , 3.25V/√ 3 Temperature Characteristic: -40℃~70℃ ≦ 0.5%...
... pieces/time (with 2 trays) V. 380V three-phase four-wire + ground wire 380V three-phase four-wire + ground wire POWER. 1KW 2KW WEIGHT. 345KG 440KG O.D...
6MBP50RA060-01 IGBT Power Module IPM-N 600V 50A Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and ...
...: -VDSS: 30 V -RDS(ON): 2.1 mΩ (max) -Qg: 4.7 nC (max) -VGS: ±20 V -Input Capacitance (Ciss): 740 pF (typ) -Power Dissipation (PD): 1.1 W (max) -Operating Junction Temperature: 150°C...
... N Channel MOSFET for Power Electronics Applications Parameters: - Drain-Source Voltage (VDS): 100V - Drain Current (ID): 10A - RDS(on): 0.0055Ω - Gate-Source Voltage (VGS): ±20V - Power Dissipation (PD): 1W...
... Drain Current (Id): 19A • Pulsed Drain Current (Id): 73A • Drain-Source On-Resistance (Rds): 0.040ohm • Maximum Junction Temperature (Tj): 175°C • Operating Temperature Range: -55°C to +175°C •...
...): -63A - RDS(on): 0.0027Ω - Gate-Source Voltage (VGS): -20V - Drain-Source On-State Resistance (RDS(on)): 0.0027Ω - Maximum Junction Temperature (Tj): 175°C - Power...
...Power Electronics Applications Features: • Low On-Resistance • Low Gate Threshold Voltage • High Forward Transfer Admittance • Low Input Capacitance • Low Output Capacitance • High Speed Switching • Avalanch...
...Power MOSFET Features: - Low On-Resistance - Fast Switching - High-Voltage Capability - Low Gate Charge - Low Output Capacitance - ESD Protected Parameters: - Drain-Source Voltage (Vdss): 500 V - Gate-Source...
...MOSFET Power Electronics Product Parameters: - Drain-Source Voltage (Vdss): 600V - Gate-Source Voltage (Vgs): ±20V - Continuous Drain Current (Id): 6A - Drain-Source On-State Resistance (Rds): 0.093 ohm - Po...
...MOSFET Power Electronics. Features and Specifications: - MOSFET Type: N-Channel - Drain Source Voltage (Vds): 60V - Drain-Source On-Resistance (Rds): 0.0065 Ohm - Continuous Drain Current (Id): 58A - Power D...
...Power MOSFET Product Description: The FDP032N08 is an N-channel power MOSFET designed for use in switching and linear applications. This device is designed to minimize the on-state resistance while providing...
... Emitter Saturation Voltage (Vce(sat)): 2.1V@25A • Operating Frequency (f): up to 20kHz • Switching Time (t): 25ns • Thermal Resistance Junction to Case (Rjc): 0...
Product Listing: TPS92611QDGNRQ1 Power Management IC Features: Wide input voltage range: 2.5 V to 6.5 V Output voltage accuracy: 2% Operating junction temperature range: -40C to 125C Low quiescent cu...