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TO-251-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ......
TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE Power dissipation MARKING A733=Device code Solid dot=Green molding compound device, if none,the normal ......
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal ......
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the ......
TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MARKING B772=Device code Solid dot = Green molding compound device, if none, the ......
SOT-89-3L Plastic-Encapsulate Transistors A92 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A92 MAXIMUM RATINGS (Ta=......
SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol ......
SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=......
SOT-23 Plastic-Encapsulate Transistors FMMT591 TRANSISTOR (PNP) FEATURE Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter ......
SOT-23 Plastic-Encapsulate Transistors MMBT4403 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ......
SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ......
G40N10 100V Mosfet Power Transistor , N Channel Transistor Fast Switching Product Summary The G40N10 uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages...
...Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as...
...Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited for high...
MMBT3904T SOT-523 3 Pin SMD Transistor 3 Pin SMD Transistor MMBT3904T SOT 523 Epitaxial Planar Die Construction MMBT3904T SOT-523 Datasheet.pdf FEATURES Complementary Type The PNP Transistor MMBT3906 is Recomme...
Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of rever...
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequenc...
Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management Mos Field Effect Transistor Description The Mos Field Effect Transistor is a type of MOSFET. The operating principle of power MOSFET...
... Effect Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead FreeandGreenDevicesAvailable (RoHSCompliant)...
...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Fr...