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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to...
... power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 30V ID = 10A RDS(ON...
...Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be u...
AP12N10D Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ......
...Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching power supplie...
... and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ...
...Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This devic...
... power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 20V ID = 6A RDS(ON)...
...Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as ...
TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) FEATURE Ÿ Audio Amplifier Ÿ Flash Unit of Camera Ÿ Switching Circuit MARKING D965=Device code Solid dot=......
TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit ......
SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ......
SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding compound device, if none,the normal ......
TO-220-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR (NPN) FEATURE · power switching applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit ......
TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN) FEATURE Power dissipation MARKING D882=Device code Solid dot=Green molding compound device, if none,the normal ......
TO-251-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ......
TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE Power dissipation MARKING A733=Device code Solid dot=Green molding compound device, if none,the normal ......
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal ......
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the ......