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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V Power MOSFET IXFQ60N50P3 I D25 = 60A IXFH60N50P3 RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Ava...
...Switching Module Non Isolated Type PWB130A PWB130A is a Thyristor module suitable for low voltage, 3 phase recifier applications. ● IT(AV)130A (each device) ● high Surge Current 3500 A (50/60Hz) ● Easy Const...
... Noise: BC859, BC860 • Complement to BC846 ... BC850 Typical Characteristics Symbol Parameter Value Units VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector ......
... Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-......
...Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancem...
SUD25N06-45L N-Channel 60-V (D-S), 175C MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed Drain Current .....
...s device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Param...
TO-92 Plastic-Encapsulate Transistors A92 TRANSISTOR (PNP) FEATURE High voltage MARKING A92=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING INFORMA...
TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 6...
TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage...
...Switching MARKING B772=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ORDERING INFORMATION Part Number Package Packing Method Pack Quantity B772 TO-126 Bulk 200pcs/...
TO-126 Plastic-Encapsulated Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Col...
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low speed switching Marking :B772 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ...
SOT-23 Plastic-Encapsulate Transistors MMBT4403 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ...
... Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP...
Products instruction The push button series are used in controlling circuit of AC voltage up to 660V/AC 50Hz, and DC voltage below 400V.It is used for controlling signal and interlocking purposes. The main body...
...Switching Brand New Mitsubishi IGBT MAXIMUM RATINGS (Tj = 25°C) INVERTER PART BRAKE PART CONVERTER PART COMMON RATING Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum ...
...Switching Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Low leakage current : IDSS =...