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... characteristics in high-temperature. This transistor is equipped with new lateral variable doping technology and special power MOS structure, making it suitable for various applications requiring high volta...
...Swap Controller with circuit breaker and power-good reporting 1 Channel General Purpose FEATURES •Single-Channel High-Side MOSFET Driver •Input Voltage: 3 V to 13 V •Output dV/dt Control Limits Inrush Curren...
...Swap Controller with circuit breaker and power-good reporting 1 Channel General Purpose FEATURES •Single-Channel High-Side MOSFET Driver •Input Voltage: 3 V to 13 V •Output dV/dt Control Limits Inrush Curren...
HJ44H11 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers o...
JY13M N and P Channel 40V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY13M is the N and P Channel logic enhancement mode power field transistors Which can provide excellent RDS(ON) and low gate charge...
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...
...Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Prot...
...Driver IC Chip Dual N Channel 40V Mosfet BUK7K6R2-40EX MOSFET Dual N-channel 40V Mosfet LFPAK-33-8 SMD/SMT 5.8 mOhms- 20 V, + 20 V Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si...
...Driver IC Chip Dual N Channel 40V Mosfet BUK7K6R2-40EX MOSFET Dual N-channel 40V Mosfet LFPAK-33-8 SMD/SMT 5.8 mOhms- 20 V, + 20 V Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si...
... MOSFET is a cutting-edge semiconductor device designed for a variety of applications requiring high efficiency, reliability, and low-power consumption. MOSFET, which stands for Metal-Oxide-Semiconductor Fie...
FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z...
...MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in ...
...Transistor MOSFET N-Channel Transistors 150V 104A TO220AB TIP120 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Techno...
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
.... These transistors are specially designed for providing high power and high frequency performance. Their main advantages include their reliability and stability, which is based on the national military stan...
...-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Con...
...TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWE...
...MOSFET is a type of power mosfet, which is designed for high voltage applications. It is characterized by its embedded FRD high voltage MOSFET technology, ultra-high voltage MOSFET application, low leakage a...
FDS6699S transistor MOS tube N channel SOIC-8 Products Description : 1. Product Model :FDS6699S 2. Description: MOSFET 3. FDS6699S transistor MOSFET N channel 21 A 30 V 3.6 MoHM 10 V 1.4 V 4. High performance T...