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RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band...
IRF540NPBF MOSFET TRANSISTOR 100V 33A 44mOhm List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND EP20K100EFC324-2 ALTERA PIC16C57-LP/P MICROCHIP DPTV-DX6630B TRIDENT UPD78F0...
STH150N10F7-2 N-Channel MOSFET Transistor List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND AD96685BH ADI HFCT-5205A AVAGO ......
STP45N10F7 MOSFET TRANSISTOR N-channel 100 V 0 013 Ohm typ 45A List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/......
MJE15028G Chipscomponent Electronic Components IC Chips MJE15028G High Power MOSFET electronic chip brand new original TO-220(TO-220-3) Bipolar transistor - Bipolar junction transistor (BJT) 8A 120V 50W NPN Cat...
...Transistor IRF9530PBF -100V -14A 200 MOhms 1 P-Channel 38.7 NC Applications Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low frequency...
Vishay IRF740PBF Npn And Pnp Transistor 400V 10A Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d...
...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to...
...: MOSFET Transistor 2. Part Number: IRLR2905TRPBF 3. Package Type: TO-220 4. Configuration: Single 5. Voltage: 100V 6. Current: 8A 7. Power Dissipation: 20W 8. Operating Temperature Range: -55°C to +150°C 9....
...MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W ...
2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−......
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
IRF540NPBF MOSFET TRANSISTOR 100V 33A 44mOhm List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND EP20K100EFC324-2 ALTERA PIC16C57-LP/P MICROCHIP DPTV-DX6630B TRIDENT UPD78F0...
STH150N10F7-2 N-Channel MOSFET Transistor List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND AD96685BH ADI HFCT-5205A AVAGO ......
STP45N10F7 MOSFET TRANSISTOR N-channel 100 V 0 013 Ohm typ 45A List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/......
BLF178XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to...
BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band Feature 1, ...
IRFP4227 200V 65A N CHANNEL MOSFET TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ......
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band...
... •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ru...