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IRFP260NPBF N-Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching ...
IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rat...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
...MOSFET - High-Performance Power Transistor The IRFB7434PBF MOSFET is a high-performance power transistor designed for efficient power management solutions. It has a low on-resistance of 2.6 mΩ, making it ide...
IRLR2908TRPBF MOSFET Power Electronic Transistor High Performance Reliable and Efficient Power Solution Product Listing: IRLR2908TRPBF Power MOSFET Features: - N-Channel MOSFET - Low Gate Charge - Fast Switchin...
AO4612 MOSFET Power Electronics - Optimized For High Efficiency And Reliability AO4612 - Power MOSFET Transistor The AO4612 is a high-performance, low-voltage, N-channel MOSFET transistor. It is designed to off...
... Rectifier for Offline and Isolated DC- DC Converters Motor Control 3 Description This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications....
CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs FEATURES CommonSourceConn ection Ultr a L o w Drain to Drain On-Resistance Space Saving SON 3.3 x 3.3mm Plastic Package Optimized for ...
... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® proc...
IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rat...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate-to-Drain Charge to Reduc...
IRFP260NPBF N-Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching ...
...Phase Gate Driver with three independent high and low side referenced output channels DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced o...
JY213H 600V Three-Phase Gate Driver IC | High-Speed MOSFET & IGBT Driver Overview The JY213H is a high-speed power MOSFET and IGBT driver featuring three independent high-side and low-side output channels for t...
...mosfet horizontal output transistor SOT323 3D 3H 3M field effect transistor TYPE NUMBERMARKING CODE: BC856W: 3D* BC856AW: 3A* BC856BW: 3B* BC857W: 3H* BC857AW: 3E* BC857BW: 3F* BC857CW: 3G* BC858W: 3M* Field...
60V TO-263 n channel transistor TO-220 advanced power field effect transistor Mosfet n channel features: FET Type:N-Channel Enhancement mode Very low on-resistance Flexible and very practical High switching cap...
BLF574 RF Mosfet 50V 1 A 225MHz 26.5dB 400W SOT539A Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 42 A Vds - Drain-So...
...TRANSISTORS ■ SGS-THOMSON PREFERRED SALESTYPES ■ NPN TRANSISTOR DESCRIPTION The 2N3439, 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industri...
BLF178XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to...