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... switching, and low on-state resistance. Product Specifications: • Voltage: 25V • Power Rating: 1.2W • On-State Resistance: 0.5 Ohms • Drain-Source ......
...high power dissipation, low gate charge, and low capacitance. The MOSFET is suitable for use in switching applications. Features: • Breakdown Voltage: 500V • Drain-Source Voltage: 500V • Gate-Source Voltage:...
...MOSFET High Performance High Efficiency Low RDS(ON) Power Electronics Product Listing: IRLML0100TRPBF MOSFET Product Description: This is an N-Channel Power MOSFET designed for low voltage, high current swit...
Product Listing: Product Name: IRFRC20TRPBF MOSFET Description: This MOSFET is a N-Channel power MOSFET developed using the advanced PowerMESH™ process technology. It offers low on-resistance and fast switching...
...IRF630NPBF MOSFET Power Electronics Description: The IRF630NPBF MOSFET Power Electronics from Infineon Technologies is a N-channel enhancement-mode power MOSFET designed for use in low-voltage power applicat...
...MOSFET The IPC 100N04S5L1R9ATMA1 is an N-channel power MOSFET designed to provide high current, low on-state resistance, and low gate charge. This device is optimized for use in automotive power management a...
...MOSFET Power Electronics Description: NVMFS5113PLT1G is a MOSFET Power Electronics device. It is a power transistor, a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that can be used to c...
...MOSFET Power Electronics Product Description: The FDD86569-F085 MOSFET Power Electronics is a high-performance, low-voltage, low-power device designed for use in a wide range of power conversion and control ...
...MOSFET Power Electronics The FDMC8010 is a highly advanced MOSFET power electronics device designed to provide superior performance in a wide range of applications. It features a low on-resistance of 10 mΩ, ...
...MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching perform...
...MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
... 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant General Description This N-Channel MV MOSFET is produced using Fairchild Semico...
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. T...
...-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high si...
...-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high s...
... shifted high side switch, and for a host ofother applications. N-CH Electrical Characteristics (TA=25℃unless otherwise noted) A. The value of RθJA is measured with the device mounted on ......
...Mosfet Power Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching ...
...-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high si...