| Sign In | Join Free | My burrillandco.com |
|
AOD424G 20V N-Channel MOSFET General Description Trench Power MOSFET technology Low R DS(ON) RoHS and Halogen-Free Compliant Application DC/DC Converters in Computing, Servers, and POL Battery protect...
AOD424G 20V N-Channel MOSFET General Description Trench Power MOSFET technology Low R DS(ON) RoHS and Halogen-Free Compliant Application DC/DC Converters in Computing, Servers, and POL Battery protect...
..., motor drivers, solar inverters, UPS power supplies, switching power supplies, and charging piles. Silicon Carbide MOSFETs are ideal for applications that require high frequency and high voltage performance...
...MOSFET is a high-frequency, high-efficiency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide material. This MOSFET has a wide working temperature range, low on-resistance, ...
...MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior swit...
...MOSFET is a kind of N type MOSFET with great heat dissipation and high voltage or ultra-high voltage rating. It is widely used in smart meter, cabinet power supply, industrial switching power supply and elec...
...density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche ratin...
...density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of ...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These featur...
...MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RD...
...Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ...
...be used as a critical component of a life support system or other similar systems. APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this a...
...Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ...
...Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ...
...MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RD...
...Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ...
...be used as a critical component of a life support system or other similar systems. APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this a...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
...Rectifier. This MOSFET is designed with a low gate-source resistance, enabling low power loss and improved switching performance. The IRFS4410ZTRLPBF is made with a planar structure and uses a combination of...