| Sign In | Join Free | My burrillandco.com |
|
...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electrical Chara...
...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electrical Chara...
...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electrical Chara...
...MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
...MOSFET Power Electronics High Performance Reliable Switching for Your Projects Product Description: IRFH9310TRPBF is a high power N-Channel MOSFET that features low on-resistance, high frequency operation, a...
... to minimize the on-state resistance while providing superior switching performance and high avalanche energy strength. Product Parameters: Vdss: 100V Rds(on): 0.0075Ω Id: 55A Package: D2PAK-7 ......
... N Channel MOSFET for Power Electronics Applications Product Description: MOSFET IPB108N15N3G is a high-performance, advanced technology power MOSFET designed for use in switching applications. It features l...
...MOSFET Power Electronics FETs High Performance Applications MIC94050YM4-TR N-Channel Enhancement Mode MOSFET Description: The MIC94050YM4-TR is a N-Channel Enhancement Mode MOSFET from Microchip Technology. ...
...MOSFET Power Electronics Product Description: This MOSFET power electronics component is specifically designed for high-performance applications, providing efficient and reliable power control. The IRFL014NT...
...MOSFET Power Electronics Product Description: The IRFS7534TRLPBF is a 100V N-Channel MOSFET with a low RDS(on) for high efficiency power switching applications. This device offers both superior performance a...
...designed for use in switching applications such as automotive DC-DC converters, load switches, and inrush current limiters. Features: - Low on-resistance - Low gate charge - Thermal shutdown protection - Aut...
.... It features a low gate-to-drain charge, low gate-to-source charge, and a fast turn-on time. The FDN308P is ideal for fast switching and...
...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transi...
...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transi...
Description: This BSC035N10NS5ATMA1 MOSFET is an N-Channel enhancement mode field-effect transistor with low on-resistance and low gate charge. It is designed for use in high-efficiency switching applications. ...