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... MOSFET with a drain-source voltage of 55V and a drain-source on-state resistance of 0.9ohm. The maximum power dissipation is 9W. This MOSFET has a drain-source breakdown voltage of 55V and a gate-source bre...
...MOSFET Power Electronics 30V N-Channel MOSFET Silicon Material Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It...
...MOSFET Power Electronics The FDV301N is an N-channel power MOSFET designed for high power switching applications. It is suitable for use in high-efficiency power conversion circuits, such as DC-DC converters...
...MOSFETs, are a type of semiconductor device used for switching electrical signals. They are widely used in a variety of applications such as LED drivers, adaptors, industrial switching power supplies, invert...
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
...Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 ...
...MOSFET Power Electronics High Efficiency High Voltage Low On Resistance The IRF3703PBF is a high performance, low on-resistance, N-channel MOSFET from International Rectifier. It utilizes the latest advanced...
... threshold voltage. This device is typically used in switching applications such as motor control, relay drivers, and other applications that require high-current switching. Key Features: • N-channel enhance...
... MOSFET Power Electronics High-Performance High-Efficiency Low-Voltage Switching Solution Product Description: The IPW60R070P6 is an N-channel MOSFET, designed for use in applications such as power managemen...
... in applications requiring high frequency and low on-state resistance switching, such as DC-DC converters, motor control, and power supplies. Features: - Ultra-low on-state resistance: 0.0019 Ohm - Low ......
... control and power conversion. The device is capable of delivering up to 5A of continuous current with very low on-resistance. It also features high-speed switching and low gate charge, making it suitable fo...
... in high voltage applications such as automotive, industrial and medical. It features a low on-resistance of 0.045 Ω, fast switching speeds and low capacitances. This device also offers low gate charge, ther...
...MOSFET Power Electronics High Current High Voltage High Speed Devices Description: The IRFP4668PBF is a high performance N-channel Power MOSFET. This device is designed to be used as a switch in industrial, ...
... and reliability, and is suitable for a variety of power management requirements. Features: • Low Rds(on) for high efficiency • Low gate charge for fast switching • High current capability • Low thermal resi...
...Mosfet Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used ...
...Mosfet Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used ...
... as solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply, charging pile, etc. The device is based on the national military standard production line, and it pro...
...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electrical Chara...
...MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...