| Sign In | Join Free | My burrillandco.com |
|
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM appl...
AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or...
P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34m (VGS = -10V) RDS(ON) < 54m (VGS = -4.5V) General Description The AO4449 uses advanced trench tec...
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM appl...
AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or...
Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. ...
Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. ...
...MOSFET Power Electronics Product Description: The IRLR8726TRLPBF MOSFET Power Electronics device is a high-speed, low-on-resistance voltage-controlled MOSFET. It offers excellent on-resistance and superior g...
...power density, and low on-resistance. With its high efficiency, it is well suited for use in high-power switching applications. Features: • Wide range of operating conditions up to 400V • High power density ...
...MOSFET Power Electronics High Performance Low Loss High Current Switching. Description: The IRGB4062DPBF is a N-channel MOSFET, housed in a TO-252 package. It is designed for use in a variety of applications...
.... It is fabricated using advanced MOSFET technology that provides excellent switching performance and low on-resistance. It features a very low gate threshold voltage (Vgs(th)) for ease of driving and fast s...
... of applications. It has a low gate charge and low gate-to-drain capacitance and is suitable for high-frequency switching applications. It features a low on-resistance and a low threshold voltage. This MOSFE...
...MOSFET Power Electronics High Performance High Efficiency Switching Description: The IRLML2244TRPBF is a P-channel enhancement mode MOSFET. It is designed to deliver high performance in power management appl...
...MOSFET Power Electronics High Performance High Reliability Switching Solution The IRF1010EPBF is a high-density MOSFET transistor with a drain-source breakdown voltage of 100V and a maximum drain current of ...
... and a maximum drain current of 8A. It is designed for use in a variety of applications such as switching, power management, low-side switching, and logic level translation. Features: • Maximum drain-source ...
...MOSFET Power Electronics High Performance Low Cost Switching Solution Description: The IRFU210PBF is a high-performance N-Channel MOSFET designed for use in power applications. It features a low gate charge,...
...MOSFET Product Description: The FDP032N08 is an N-channel power MOSFET designed for use in switching and linear applications. This device is designed to minimize the on-state resistance while providing super...
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate volt...
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate volt...
...MOSFET developed by International Rectifier. 2. It is designed for use in high-current, high-speed switching applications. 3. The MOSFET has an operating voltage range of 20V to 100V and a current rating of ...