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Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the p...
...MOSFET Power Electronics High Performance and Reliable Power Switching Solution Parameters: • Drain-Source Voltage (VDS): -55V • Gate-Source Voltage (VGS): -20V • Drain Current (ID): -60 A • Drain-Source On-...
...MOSFET Power Electronics High Power High Efficiency Switching Features: • N-Channel Enhancement Mode • Low On-Resistance RDS(on) • Fast Switching Speed • Improved Gate Charge x RDS(on) Product • RoHS Complia...
IRFB38N20DPBF MOSFET Power Electronics High-Performance Low-Voltage Low-Power Switching Device Product Parameters: •Voltage: 200V •Drain-Source On-Resistance: 0.027 Ohm •Continuous Drain Current: 20A •Power Dis...
SPW20N60C3 MOSFET Power Electronics High-Performance Low Loss Switching for High Power Applications Package Type: TO-220 Maximum Drain Source Voltage (Vds): 600V Maximum Gate Source Voltage (Vgs): ±20V Drain Cu...
... RDS(on)@25°C: 0.032Ω • Gate-Source Voltage: ±20V • Power Dissipation: 600W • Operating Temperature Range: -55°C to 150°C • Mounting Type: Through Hole • Package / Case: TO-247-3 Why buy from us >>> Fast / ....
SPW24N60C3 MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD...
...Continuous Drain Current (ID): 5.5A 4. On-State Resistance (RDS(on)): 0.84Ω 5. Power Dissipation (PD): 9.2W 6. Operating Temperature: -55°C to 150°C 7. Package: TO-220 8. Transistor Polarity: N-Channel 9. Mo...
BSC014N06NS MOSFET Power Electronics High Performance Low Power Consumption Product Listing: BSC014N06NS Parameters: - Voltage: 600V - Current: 14A - RDS(on): 0.0048ohm - Package: TO-252 - Gate Charge: 6nC - Po...
...package; reinforced with a copper clip -High temperature operation; up to 175°C Applications: -DC-DC converters -Power supplies -Motor control -LED lighting -Industrial applications Specifications: -Package ...
...MOSFET Power Electronics Package for High Power Applications N-Channel 30 V 3.5A (Ta) 500mW (Ta) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On...
...MOSFET Power Electronics - High Performance Low Loss Power Switching Solution for Industrial Applications Drain to Source Voltage (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Ma...
...MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5...
...) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 20 V FET Feature - Power Dissipation (Max) 329mW (Ta)...
...) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 20 V FET Feature - Power Dissipation (Max) 329mW (Ta)...
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...