| Sign In | Join Free | My burrillandco.com |
|
... Low On Resistance MOSFET Power Electronics for High Efficiency Applications Parameters: - Operating Voltage: -20V to -60V - Drain Current: -3A - On Resistance: 0.0045Ω - Gate Threshold Voltage: -1.6V to -2....
BSC010N04LS MOSFET Power Electronics High Performance Low On Resistance Ultra Low Gate Charge Package: TO-252 Drain to Source Voltage (Vdss): 40V Gate to Source Voltage (Vgs): ±20V Continuous Drain Current (Id)...
...MOSFET Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds On (Max) @ Id, Vgs: 10 mOhm @ 10V, 33A •...
... Specifications: • Drain-Source Voltage: -100V • Drain Current-Continuous: -44A • Gate-Source Voltage: -20V • Power Dissipation: -68W • Operating Temperature Range: -55°C to +150°C • Mounting: -SMD • Package...
...MOSFET Power Electronics for High-Performance Applications Features: • Low on-resistance RDS(on): 7.8mΩ (max) • Fast switching • Low gate charge • 100% avalanche tested • RoHS compliant • Compliant to JEDEC ...
... - Pulsed Drain Current (Idm): 60A - Rds(on): 0.019Ω - Input Capacitance (Ciss): 4200pF - Power Dissipation (Pd): 7.2W - Operating and Storage Temperature: -55℃ to +150℃ - Package: TO-220AB Why buy from us >...
...-Source Breakdown Voltage (Vds): 100V • Gate-Source Voltage (Vgs): +/- 20V • Continuous Drain Current (Id): 34A • Power Dissipation (Pd): 143W • Rds(on): 0.028 Ohm • Threshold Voltage (Vth): 4V • Operating T...
... MOSFET Power Electronics High Performance High Efficiency Low On Resistance Parameters: - Drain-Source Voltage: 100V - Continuous Drain Current: 70A - On-Resistance RDS(on): 0.02 Ohm - RDS(on) Test Voltage:...
SI7430DP-T1-GE3 MOSFET Power Electronics High Performance Low Voltage Small Size Solution Features: • Enhanced channel temperature and power rating for improved ruggedness • Low on-resistance and fast switching...
IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: Drain-Source Voltage: 60V Gate-Source Voltage: 20V Continuous Drain Current: -14A Pow...
...MOSFET Power Electronics High Performance and Reliable Switching Solutions Features: • N-Channel • Logic Level Gate • 100V • 8.7A, 11.8A • Surface Mount • 30mOhm, 40mOhm • TO-220 Package • Fast Switching • L...
Product Listing: Product: AOK60N30L MOSFET Power Electronics Parameters: Voltage: 600V Current: 30A Power: 300W Drain-Source On-Resistance: 0.14 Ohms Package: TO-247 Operating Temperature Range: -55C to 175C ...
... design for improved switching performance - Fully qualified to AEC-Q101 Applications: - DC/DC converters - Motor control - Lighting - Power management - Portable electronics Package: SOT-23 Specifications: ...
... (Vgs): ±20V • Continuous Drain Current (Id): 6A • RDS(on): 0.043Ω • Pulsed Drain Current (Idm): 10A • Maximum Power Dissipation (Pd): 8W • Operating Temperature Range (Tj): -55°C to 150°C •...
...Current - Continuous Drain (Id) @ 25°C: 11A • Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 25V • Power - Max: 500mW • Operating Temperature: -55°C to 150°C • Mounting Type: Surface Mount • Package / Case: T...
...MOSFET Power Electronics 4.4 Amps 20 Volts P−Channel TSOP−6 Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max)...
... 12 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V FET Feature - Power Dissipation (Max) 1.6W (Ta)...
...MOSFET Power Electronics Module Single P-Channel WDFN8 -100 V 120 m -13 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) ...
... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 24 V FET Feature - Power Dissipation (Max) 840mW (Ta)...
... 20 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 16 V FET Feature - Power Dissipation (Max) 8.3W (Ta)...