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High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
IRF9Z24NPBF MOSFET Power Electronics High Performance High Voltage Switching for High Power Applications Features: • N-Channel Enhancement Mode • Drain-Source Voltage: 100V • Drain Current: 33A (Tc=25℃) • Rds(o...
IRF9362TRPBF High Performance MOSFET Power Electronics for Reliable and Efficient Power Delivery Key Features: -Voltage: 100V -Current: 3.2A -RDS(on): 0.05ohm -Gate Charge: 4.8nC -Thermal Resistance: 0.72C/W -...
IRFP140NPBF MOSFET Power Electronics High Efficiency Switching Device for Maximum Power Transfer Features: • N-Channel • VDSS = 100V • ID = 18A • RDS(on) = 0.02Ω • Package = TO-220AB • RoHS Compliant • High-spe...
IRF7314TRPBF MOSFET Power Electronics High Efficiency Reliability for All Your Power Needs Features: -High-Side Load Switch -Low On-Resistance: 0.08Ω -High Continuous Drain Current: 28A (Tc = 25°C) -......
IPD65R600C6 MOSFET Power Electronics High Efficiency High Power Low Losses Product Parameters: Drain-Source Voltage: 600V Continuous Drain Current: 65A Channel Temperature: 175C RDS(on): 0.0075 Pac...
MOSFET Power Electronics BSC160N15NS5 for Power Electronics Applications Parameters: • Drain-Source Voltage: 800 V • Gate-Source Voltage: ±20 V • Continuous Drain Current: 160 A • RDS(on): <1.5 mΩ • Pulsed Drain Current: 200 A • Package/Case: TO-263-3 • ......
IRFB4620PBF MOSFET Power Transistor High Performance Reliable Power Switching Features: 200V Drain-Source Voltage (VDS) 8.9A Continuous Drain Current (ID) at 25C 12.3A Continuous Drain Current (ID) at 10...
IRF9Z34NSTRLPBF MOSFET Power Electronics High Performance Reliable Power Control Product Features: - N-Channel Enhancement Mode - Ultra Low On-Resistance - High Input Impedance - Low Gate Threshold ......
...-Gate Voltage (Vdg): 30V - Gate-Source Voltage (Vgs): ±20V - Drain Current (Id): 8A (Tc=25℃) - Power Dissipation (Pd):...
...MOSFET Power Electronics Features: - Low RDS(on) for high efficiency - Low gate charge for high switching performance - High current capability and low thermal resistance for high power handling - 100% avala...
FQD5N60CTM MOSFET Power Electronics - High Performance High Efficiency and Reliable Power Solution N-Channel QFET 600 V, 2.8 A, 2.5 Ω Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C ...
NVMFS5C612NLT1G MOSFET Power Electronics - High-Performance High-Efficiency Transistor for Advanced Power Applications Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 36A (Ta), 235A (...
NTD6416ANT4G TO-252-3 MOSFET Power Electronics Module with High Power Output and Low On-Resistance N-Channel 100 V 17 A 81 m Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25C 17A (Tc) ...
NTTFS4C10NTAG 8-WDFN MOSFET Power Electronics – Ideal for High-Power Switching Applications N-Channel 30 V 8.2A (Ta) 44A (Tc) 790mW (Ta) Drain to Source Voltage (Vdss) 30 V ......
Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driv...
Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driv...
...: -VDSS: 30 V -RDS(ON): 2.1 mΩ (max) -Qg: 4.7 nC (max) -VGS: ±20 V -Input Capacitance (Ciss): 740 pF (typ) -Power Dissipation (PD): 1.1 W (max) -Operating Junction Temperature: 150°C...
...-Source Voltage: 20V • Gate-Source Voltage: -20V • Continuous Drain Current: 17A • Pulsed Drain Current: 27A • Power Dissipation:...
...MOSFET power transistor with a low on-resistance of 24A. 2. It has a breakdown voltage of 500V and a drain-source voltage of 400V. 3. It is a surface-mount device with a thermal resistance of 1.5°C/W for fas...