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Total 675 products for what is pam Manufacture & Suppliers

FUJI AJ13209 NXT M3 M3S X Axis XS Axis Ribbon Cable in stocks fast delivery

... order quantity:1 Pcs 6.period for dispatch:1~5days FUJI NXT PARTS: FUJI XS03503 converyor sensor NXTII FUJI K53050 PAM parts NXT&NXTII FUJI MPJ2220 PAM parts CP6 CP7,CP8 FUJI AA0EX04 H04 JIG Nozzel NXT&NXTI...

Dongguan Kingfei Technology Co.,Limited
Guangdong,China

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FUJI AWPH3120 CP6 Black And White Pole in stocks fast delivery

... converyor sensor NXTII FUJI K53050 PAM parts NXT&NXTII FUJI MPJ2220 PAM parts CP6 CP7,CP8 FUJI AA0EX04 H04 JIG Nozzel NXT&NXTII FUJI XK00792 parts Camera CCD NXT&......

Dongguan Kingfei Technology Co.,Limited
Guangdong,China

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FUJI H4218K NXT M6II X Axis Bearing Original brand new in stocks fast delivery

... order quantity:1 Pcs 6.period for dispatch:1~5days FUJI NXT PARTS: FUJI XS03503 converyor sensor NXTII FUJI K53050 PAM parts NXT&NXTII FUJI MPJ2220 PAM parts CP6 CP7,CP8 FUJI AA0EX04 H04 JIG Nozzel NXT&NXTI...

Dongguan Kingfei Technology Co.,Limited
Guangdong,China

Verified Supplier

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Helium Micro-Leak Detector For Lid Can Making EOE

Helium Micro-Leak Detector For Lid Can Making Lid Helium Leak Detector Advantages: High detection accuracy: Typically achieves a detection accuracy level of 10^-8 to 10^-7 Pa��m^3/s (with the highest level reach...

Delicacy packaging machinery co., ltd.
Guangdong,China

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Fully Automatic Helium Micro-Leak Detector For Easy Open End Tin Can

Fully Automatic Helium Micro-Leak Detector For Easy Open End Tin Can Advantages: High detection accuracy: Typically achieves a detection accuracy level of 10^-8 to 10^-7 Pa��m^3/s (with the highest level reachin...

Delicacy packaging machinery co., ltd.
Guangdong,China

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10,000 L/H Auto-Dosing System | Wastewater Treatment

... L/H Automatic PAM/PAC Dosing System for Sewage Treatment Product Overview Automatic dosing systems are essential in modern wastewater treatment processes, enabling continuous and efficient preparation of po...

Jiangsu Longdai Environmental Protection Group Co., Ltd.
Jiangsu,China

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(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density

... by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including Ga...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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A Plane Si-Doped GaN Freestanding Hexagonal GaN Crystal Substrate

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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10*10mm2 N-GaN Freestanding GaN Substrate, Epi-Ready With Double Side Polished

... by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including Ga...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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(11-22) Plane U-GaN Freestanding Gallium Nitride(GaN) Crystal Substrate

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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(20-21) Plane Semi-Polar N-GaN Freestanding GaN Crystal Substrate

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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(20-2-1) Plane Si-GaN Freestanding Gallium Nitride(GaN) Wafer

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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(20-21) Plane Si-GaN Freestanding Pure Gallium Nitride(GaN) Wafer

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
A Plane N-GaN Freestanding GaN Substrate

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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10*10mm2 Si-GaN Freestanding GaN Substrate For Iii-Nitride LDs

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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M Plane U-GaN Freestanding GaN (Gallium Nitride) Substrate -Powerway Wafer

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
(20-2-1) Plane U-GaN Freestanding GaN (Gallium Nitride) Substrate

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
High-Purity M Plane N-GaN Freestanding GaN(Gallium Nitride) Substrate

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
(20-21) Plane U-GaN Freestanding Gallium Nitride (GaN) Substrate

...PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN subs...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy

... by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including Ga...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart

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