Total 1460 products for what is sat Manufacture & Suppliers

• IGBT Power Module MP6501A Toshiba NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING

  

  ... High Input Impendance High DCCurrent Gain: hFE = 100(Min.)(IC=15A) Low Saturation Voltage: VCE(sat)...

  Mega Source Elec.Limited

  China

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• IGBT Power Module 6MBI25S-120-02 - Fuji Electric - IGBT(1200V/25A)

  

  ... supply · Industrial machines, such as welding machines Applications: · Compact package · P.C.board mount · Low VCE(sat) Specifications: part no. 6MBI25S-120 Manufacturer Fuji Electric supply ability 10000 d...

  Mega Source Elec.Limited

  China

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• MG500Q1US1 - Toshiba Semiconductor - N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

  

  ... input impcdonce High speed : Tf =0.5us(Max) Trr = 0.5us(Max) Low saturation voltage: Vce(sat) = 4.0V(Max) Enhancement-Mode The electrodes are isolated from case. Specifications: part no. MG500Q1US1 Manufact...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15D4HM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15D6EM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15G1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15G1AL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15G1AM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15G4GM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15G6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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