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Total 1460 products for what is sat Manufacture & Suppliers

IGBT Power Module MG50J2YS9 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS40- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS91 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2.70V (Max.) (IC=50A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 50A) Specifications: part no. MG50J6EL1...

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6ES1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 50A) Specifications: part no. MG50J6ES1...

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 50A) Specifications: part no. MG50J6ES40...

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6ES50- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC=400A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG50N2YS9- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N2YS9 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

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IGBT Power Module MG50N2YS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N2YS1 Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

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IGBT Power Module MG50N6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N6ES40 Manufacturer TOSHIBA supply ability 1...

Mega Source Elec.Limited
China

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IGBT Power Module MG50Q2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... = 0.5µs (max.) trr = 0.5µs (max.) [1] Low saturation voltage : VCE(sat) = 4.0V (max.) [1] Enhancement−mode [1] Includes a complete half bridge in one package. [1] The electrodes are isolated from case. Spec...

Mega Source Elec.Limited
China

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IGBT Power Module MG50Q2YS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... = 0.5µs (max.) trr = 0.5µs (max.) [1] Low saturation voltage : VCE(sat) = 4.0V (max.) [1] Enhancement−mode [1] Includes a complete half bridge in one package. [1] The electrodes are isolated from case. Spec...

Mega Source Elec.Limited
China

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IGBT Power Module MG50Q2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... speed : tf = 0.3µs (Max) @Inductive load [1]Low saturation voltage : VCE (sat) = 3.6V (Max) [1]Enhancement-mode [1]Includes a complete half bridge in one package. [1]The electrodes are isolated from case. S...

Mega Source Elec.Limited
China

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IGBT Power Module MG75J1ZS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf= 0.30µs (max) (IC = 75A) trr = 0.15µs (max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 75A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG75J1ZS41- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf= 0.30µs (max) (IC = 75A) trr = 0.15µs (max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 75A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG75J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf= 0.30µs (max) (IC = 75A) trr = 0.15µs (max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 75A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG75J2YS9 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG75J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

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