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Total 1460 products for what is sat Manufacture & Suppliers

IGBT Power Module MG150Q1JS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS43 Manufacturer TOSHIBA supply ability 1...

Mega Source Elec.Limited
China

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IGBT Power Module MG150Q1JS65H - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65H Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG150Q1JS65HA - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65HA Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

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IGBT Power Module MG150Q2YS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...speed : tf = 0.3µs (Max) @Inductive Load [1]Low saturation voltage : VCE (sat) = 3.6V (Max) [1]Enhancement-mode [1]Includes a complete half bridge in one package. [1]The electrodes are isolated from case. Sp...

Mega Source Elec.Limited
China

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IGBT Power Module MG200H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200H1FL1A - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A Specifications: part no. MG200H1FL1...

Mega Source Elec.Limited
China

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IGBT Power Module MG200H1JK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J2YS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J2YS11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J2YS40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J2YS42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J2YS45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no. MG200J2YS45...

Mega Source Elec.Limited
China

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IGBT Power Module MG200M1FK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200M1UK1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200N1US41 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG200Q1JS8 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no....

Mega Source Elec.Limited
China

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