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Total 1460 products for what is sat Manufacture & Suppliers

IGBT Power Module MG100G2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100G2YS1 Manuf...

Mega Source Elec.Limited
China

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IGBT Power Module MG100H2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100H2CL1 Manuf...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100H2DL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100H2DL2 Manuf...

Mega Source Elec.Limited
China

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IGBT Power Module MG100J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) [1]Low saturation voltage : VCE (sat)=2.70V (Max) (IC=100A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG100J6ES52 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100J6ES52 Manu...

Mega Source Elec.Limited
China

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IGBT Power Module MG100M2YK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case Specifications: part no. MG100M2YK1 Manufa...

Mega Source Elec.Limited
China

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IGBT Power Module MG100Q2YS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...speed : tf = 0.3µs (Max) @Inductive load [1]Low saturation voltage : VCE (sat) = 3.6V (Max) [1]Enhancement-mode [1]Includes a complete half bridge in one package. [1]The electrodes are isolated from case. Sp...

Mega Source Elec.Limited
China

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IGBT Power Module MG150G2YL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG150H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG150H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

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IGBT Power Module MG150H2DL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150H2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150J1BS11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150J1JS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150J1JS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150J1ZS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Specifications: part no....

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150J7KS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1] 7 IGBTs built into 1 package. [1] Enhancement-mode [1] High speed type IGBT : Inverter stage : VCE (sat) = 2.8V (max) (@IC = 150A) : tf = 0.5µs (max) (@IC = 150A) : trr = 0.3µs (max) (@I...

Mega Source Elec.Limited
China

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