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Total 1460 products for what is sat Manufacture & Suppliers

IGBT Power Module MG75J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG75J2YS91 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no....

Mega Source Elec.Limited
China

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IGBT Power Module MG75J6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

.... [1]High speed : tf = 0.30µs (Max) (IC = 75A) trr = 0.15µs (Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no. MG75J6EL1 Manufacturer...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q1JS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q1JS40 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q1JS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q1JS43 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) [1] Low saturation voltage++++++++++++ : VCE(sat) = 4.0V (Max) [1] Enhancement-mode [1] Includes a complete half bridge in one package. [1] The electrodes are isolated from case. Spe...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q2YS2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) [1] Low saturation voltage++++++++++++ : VCE(sat) = 4.0V (Max) [1] Enhancement-mode [1] Includes a complete half bridge in one package. [1] The electrodes are isolated from case. Spe...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q2YS11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... : tf = 0.5µs (Max) trr = 0.5µs (Max) [1] Low saturation voltage : VCE(sat) = 4.0V (Max) [1] Enhancement-mode [1] Includes a complete half bridge in one package. [1] The electrodes are isolated from case. Sp...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS40 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q2YS42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS42 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q2YS43- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) [1] Low saturation voltage++++++++++++ : VCE(sat) = 4.0V (Max) [1] Enhancement-mode [1] Includes a complete half bridge in one package. [1] The electrodes are isolated from case. Spe...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG75Q2YS44 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS44 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG75Q2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... µs (Max) @Iinductive load [1] Low saturation voltage : VCE (sat) = 3.6 V (Max) [1] Enhancement-mode [1] Includes a complete half bridge in one package [1] The electrodes are Isolated from case Specification...

Mega Source Elec.Limited
China

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IGBT Power Module MG100G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100G1AL2 Manuf...

Mega Source Elec.Limited
China

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IGBT Power Module MG100G1AL2-4 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case Specifications: part no. MG100G1AL2-4 Manu...

Mega Source Elec.Limited
China

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IGBT Power Module MG100G1AL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100G1AL3 Manuf...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100G1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100G1FL1 Manuf...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100G2CL1 Manuf...

Mega Source Elec.Limited
China

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IGBT Power Module MG100G2DL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... : tf = 0.5µs (Max) trr = 0.5µs (Max) [1]Low saturation voltage : VCE (sat) = 4.0V (Max) [1]Enhancement-mode [1]Includes a complete half bridge in one package. [1]The electrodes are isolated from case. Speci...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100G2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low saturation voltage : VCE (sat) = 3.5V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG100G2YL1 Manuf...

Mega Source Elec.Limited
China

Verified Supplier

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