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AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent...
Wholesale electronic components Support BOM Quotation AP2344GN-H Description AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance an...
Specialized Hot ICs AP2302AGN-HF APEC AP2302AGN-HF Description AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switc...
Electronic component AP1334GEU-HF advantage price for original stock Description AP1334 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistan...
Cheap Factory Price AP1332GEU-HF Please Contact The Business, Is On Same Day Shall Prevail Description AP1332 series are from Advanced Power innovated design and silicon process technology to achieve the lowest...
2SC5200-O High power amplifier TO-3PL POWER AMPLIFIER APPLICATIONS Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. RESTRICTIONS ON PRODUCT USE TOSHIBA is co...
General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low com...
IXYH30N450HV IGBT PT 4500 V 60 A 430 W Through Hole TO-247HV IXYS IXYT30N450HV & IXYH30N450HV XPT IGBTs IXYS IXYT30N450HV and IXYH30N450HV High-Voltage XPT IGBTs feature a 4.5kV maximum collector-emitter volt...
General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low com...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resist...
General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low com...
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resis...
AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent...
Wholesale electronic components Support BOM Quotation AP2344GN-H Description AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance an...
Specialized Hot ICs AP2302AGN-HF APEC AP2302AGN-HF Description AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switc...
Electronic component AP1334GEU-HF advantage price for original stock Description AP1334 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistan...
Cheap Factory Price AP1332GEU-HF Please Contact The Business, Is On Same Day Shall Prevail Description AP1332 series are from Advanced Power innovated design and silicon process technology to achieve the lowest...
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m RDS(ON) (at VGS = 4.5V) < 30m RDS(ON) (at VGS = 2.5V) < 48m General Description The HXY4404 uses advance...
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5m RDS(ON) (at VGS = 4.5V) < 15.5m General Description The HXY4406A uses advanced trench technology toprovi...