N Type , InP(Indium Phosphide) Semiconductor Wafer , 2”, Test Grade
PAM-XIAMEN manufactures high purity single crystal Indium Phosphide
Wafers for optoelectronics applications. Our standard wafer
diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size;
wafers can be produced in various thicknesses and orientations with
polished or unpolished sides and can include dopants. PAM-XIAMEN
can produce wide range grades: prime grade, test grade, dummy
grade, technical grade, and optical grade. PAM-XIAMEN also offer
materials to customer specifications by request, in addition to
custom compositions for commercial and research applications and
new proprietary technologies.
N Type, InP Wafer, 2”, Test Grade
| 2"InP Wafer Specification | | | |
| Item | Specifications |
| Conduction Type | N-type | N-type |
| Dopant | Undoped | Sulphur |
| Wafer Diameter | 2" |
| Wafer Orientation | 100±0.5° |
| Wafer Thickness | 350±25um |
| Primary Flat Length | 16±2mm |
| Secondary Flat Length | 8±1mm |
| Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
| Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70cm2/V.s | ＞1000cm2/V.s |
| Resistivity | N/A | N/A | N/A | ＞0.5x107Ωcm |
| EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
| TTV | <10um |
| BOW | <10um |
| WARP | <12um |
| Laser Marking | upon request |
| Suface Finish | P/E, P/P |
| Epi Ready | yes |
| Package | Single wafer container or cassette |
What is InP wafer?
Indium phosphide is a semiconducting material similar to GaAs and
silicon but is very much a niche product. It’s very effective at
developing very high-speed processing and is more expensive than
GaAs because of the great lengths to gather and develop the
ingredients. Let’s take a look at some more facts about indium
phosphide as it pertains to an InP Wafer.
Recombination Parameters
| Pure n-type material (no ~ 10-14cm-3) | |
| The longest lifetime of holes | τp ~ 3·10-6 s |
| Diffusion length Lp = (Dp·τp)1/2 | Lp ~ 40 µm. |
| Pure p-type material(po ~ 1015cm-3) | |
| (a)Low injection level | |
| The longest lifetime of electrons | τn ~ 2·10-9 s |
| Diffusion length Ln = (Dn·τn)1/2 | Ln ~ 8 µm |
| (b) High injection level (filled traps) | |
| The longest lifetime of electrons | τ ~ 10-8 s |
| Diffusion length Ln | Ln ~ 25 µm |
 | Surface recombination velocity versus the heat of reaction per atom
of each metal phosphide ΔHR
(Rosenwaks et al. [1990]). |
If the surface Fermi level EFS is pinned close to midgap (EFS~Eg/2)
the surface recombination velocity increases from ~5·10-3cm/s for
doping level no~3·1015 cm-3 to ~106 cm/s for doping level no ~
3·1018cm-3 (Bothra et al. [1991]).
| Radiative recombination coefficient (300 K) | 1.2·10-10 cm3/s |
| Auger coefficient (300 K) | ~9·10-31 cm6/s |
Uses
InP is used in high-power and high-frequency electronics[citation
needed] because of its superior electron velocity with respect to
the more common semiconductors silicon and gallium arsenide.
It was used with indium gallium arsenide to make a record breaking
pseudomorphic heterojunction bipolar transistor that could operate
at 604 GHz.
It also has a direct bandgap, making it useful for optoelectronics
devices like laser diodes. The company Infinera uses indium
phosphide as its major technological material for manufacturing
photonic integrated circuits for the optical telecommunications
industry, to enable wavelength-division multiplexing applications.
InP is also used as a substrate for epitaxial indium gallium
arsenide based opto-electronic devices.
Are You Looking for an InP Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InP
wafers, as we have been doing it for almost 30 years! Enquire us
today to learn more about the wafers that we offer and how we can
help you with your next project. Our group team is looking forward
to providing both quality products and excellent service for you!
