Sic resistance growth crystal furnace high temperature heating
ingot 6inch 8inch 12 inch
Silicon carbide resistance crystal furnace is a kind of equipment
specially used for growing silicon carbide (SiC) crystals. As a
kind of wide band gap semiconductor material, silicon carbide has
excellent properties such as high thermal conductivity, high
breakdown electric field and high electron saturation drift speed,
and is widely used in power electronics, radio frequency devices
and high temperature semiconductors. Resistive long crystal furnace
provides high temperature environment through resistive heating,
which is the key equipment to realize the growth of silicon carbide
crystal.
Characteristics of SIC resistance long crystal furnace
· High temperature capacity: It can provide a high temperature
environment above 2000°C to meet the needs of silicon carbide
crystal growth.
· High precision temperature control: The temperature control
accuracy can reach ±1°C to ensure the quality of crystal growth.
· High stability: The resistance heating method is stable and
reliable, suitable for long-term continuous work.
· Low pollution: high purity materials and inert atmosphere are
used to reduce the influence of impurities on crystal quality.
Technical specifications
| Specification | Details |
|---|
| Dimensions (L × W × H) | 2500 × 2400 × 3456 mm or customize |
| Crucible Diameter | 900 mm |
| Ultimate Vacuum Pressure | 6 × 10⁻⁴ Pa (after 1.5h of vacuum) |
| Leakage Rate | ≤5 Pa/12h (bake-out) |
| Rotation Shaft Diameter | 50 mm |
| Rotation Speed | 0.5–5 rpm |
| Heating Method | Electric resistance heating |
| Maximum Furnace Temperature | 2500°C |
| Heating Power | 40 kW × 2 × 20 kW |
| Temperature Measurement | Dual-color infrared pyrometer |
| Temperature Range | 900–3000°C |
| Temperature Accuracy | ±1°C |
| Pressure Range | 1–700 mbar |
| Pressure Control Accuracy | 1–10 mbar: ±0.5% F.S;
10–100 mbar: ±0.5% F.S;
100–700 mbar: ±0.5% F.S |
| Operation Type | Bottom loading, manual/automatic safety options |
| Optional Features | Dual temperature measurement, multiple heating zones |
Sic resistance growth furnace results
Growth result
Using advanced physical vapor transfer (PVT), the SiC resistance
growth furnace can precisely control the crystal growth conditions
at high temperatures to ensure the growth of high-quality,
low-defect silicon carbide single crystals. The equipment has the
characteristics of high precision temperature control (±1°C), high
efficiency and energy saving, stable and reliable, suitable for
long-term continuous operation. The equipment provided by ZMSH is
also equipped with an intelligent monitoring system that adjusts
growth parameters in real time to further improve crystal
consistency and yield to meet the semiconductor industry's
demanding requirements for high-performance crystals.
Production standard semiconductor
ZMSH has many years of technology accumulation in the field of SiC
resistance growth furnaces, providing one-stop services from
equipment design and manufacturing to after-sales support. Our
devices not only meet semiconductor industry standards, but are
also optimized for applications such as power electronics, RF
devices and new energy to ensure superior crystal performance in
high temperature, high frequency and high power scenarios.
ZMSH service
ZMSH focuses on providing high-performance SiC resistance growth
furnaces and supporting services, including equipment
customization, process optimization and technical support. With
many years of industry experience, we ensure the high precision
temperature control, stability and energy efficiency of the
equipment to meet the semiconductor industry's demand for
high-quality silicon carbide crystals. ZMSH's strength lies in fast
delivery, customized solutions and 24/7 after-sales service,
providing customers with comprehensive support from equipment
installation to crystal growth process optimization, helping
customers to lead in power electronics, RF devices and other
fields.
Q&A
