Sic growth furnace PVT method 6inch 8inch 12 inch low energy
consumption
The silicon carbide induction growth furnace is a device for
growing high quality silicon carbide (SiC) crystals using induction
heating technology to provide a high temperature environment.
Induction growth furnace directly heats the graphite crucible and
raw materials through the principle of electromagnetic induction.
It has the characteristics of fast heating speed, precise
temperature control and low energy consumption, and is one of the
key equipment for preparing silicon carbide single crystal.
Characteristics of SiC induction growth furnace
· High efficiency heating: induction heating speed, high thermal
efficiency, low energy consumption.
· Precise temperature control: The temperature control accuracy can
reach ±1°C to ensure the quality of crystal growth.
· High stability: induction heating without contact, reduce
pollution, suitable for long-term continuous work.
· Low pollution: high purity graphite and inert atmosphere are used
to reduce the influence of impurities on crystal quality.
Technical specifications
| Specification | Details |
|---|
| Dimensions (L × W × H) | 3200x1150x3600mm or customize |
| Furnace chamber diameter | Medium 400mm |
| Limit vacuum | 5x10-4Pa(1.5h after molecular pump start) |
| Induction coil travel | 200mm |
| Furnace chassis stroke | 1250mm |
| Heating method | Induction heating |
| Heating method | Induction heating |
| The maximum temperature in the furnace | 2400°C |
| Heating power supply | Pmax=40Kw, frequency 8~12KHz |
| Temperature measurement | Two-color infrared temperature measurement |
| Temperature measurement range | 900~3000℃ |
| Temperature control accuracy | ±1°C |
| Control pressure range | 1~700mbar |
| Pressure Control Accuracy | 1~10mbanr, ±0.5%F.S;
10~100mbanr, 0.5%F.S;
100~700mbar ±0.5mbar |
| Loading methodloading mode | Lower loading, easy to operate, safe |
| Optional configuration | Crucible rotation, double temperature measurement point. |
Design advantage
1. meet 6 inch /8 inch crystal growth;
2. meet the semi-insulated and conductive crystal growth
environment, crucible rotation to improve temperature uniformity,
coil lifting to reduce disturbance;
3. double-layer quartz cylinder water cooled structure, can
effectively improve the life of the chamber, provide a stable long
crystal environment, conducive to the growth of high-quality
crystals;
4. up and down temperature real-time accurate monitoring to
facilitate process debugging;
5. optional constant power, constant current, constant temperature
working mode;
6. one key intelligent start, reduce manual intervention, conducive
to large-scale production;
7. silicon carbide induction long crystal furnace is suitable for
the growth of high-quality six-inch silicon carbide single product,
high purity silicon carbide raw material synthesis, crystal
annealing and other fields;
8. compact three-dimensional machine design, convenient layout,
improve plant utilization;
9. Using high-precision butterfly valve and mass flowmeter to
control the growth pressure in the furnace, providing a stable
growth atmosphere. In particular, the maximum pressure control
accuracy of ±1Pa can be achieved under the crystal growth pressure.
The effect of SiC induction growth furnace
The silicon carbide induction growth furnace can efficiently grow
high quality and low defect silicon carbide single crystal, the
crystal purity can reach 99.999% or more. These single crystals are
used to manufacture high-performance power devices (such as
MOSFETs, Schottky diodes) and RF devices with high voltage
resistance, low on-loss and high frequency characteristics,
significantly improving the performance of electric vehicles, solar
inverters and 5G communications equipment. In addition, the high
temperature stability and precise temperature control of induction
growth furnaces ensure crystal consistency and yield, meeting the
stringent material requirements of the semiconductor industry.
ZMSH service
ZMSH provides design, manufacturing, installation and after-sales
support services for silicon carbide induction growth furnaces,
including equipment customization, process optimization and
technical training. With advanced induction heating technology and
extensive industry experience, we ensure high efficiency, stability
and low energy consumption of our equipment, while providing fast
response and 24/7 technical support to help customers achieve
large-scale production of high-quality silicon carbide crystals.
Q&A
