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Bipolar Junction Transistor

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Total 10000 products for bipolar junction transistor Manufacture & Suppliers

EVL32-060 BIPOLAR TRANSISTOR MODULES Rating and Specifications FUJITSU IGBT Power Module

EVL32-060 is a BIPOLAR TRANSISTOR MODULES Rating and Specifications . Part NO: EVL32-060 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: ......

Mega Source Elec.Limited
China

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2DI300M-050-01 BIPOLAR TRANSISTOR MODULES Rating and Specifications FUJITSU IGBT Power Module

2DI300M-050-01 is a BIPOLAR TRANSISTOR MODULES Rating and Specifications. Part NO: 2DI300M-050-01 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting ......

Mega Source Elec.Limited
China

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ETN81-055 BIPOLAR TRANSISTOR MODULES Rating and Specifications FUJITSU IGBT Power Module

ETN81-055 is a BIPOLAR TRANSISTOR MODULES Rating and Specifications. Part NO: ETN81-055 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: ......

Mega Source Elec.Limited
China

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EVK31-050 BIPOLAR TRANSISTOR MODULES Rating and Specifications FUJITSU IGBT Power Module

EVK31-050 is a BIPOLAR TRANSISTOR MODULES Rating and Specifications . Part NO: EVK31-050 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: ......

Mega Source Elec.Limited
China

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EVK71-060 BIPOLAR TRANSISTOR MODULES Rating and Specifications FUJITSU IGBT Power Module

EVK71-060 is a BIPOLAR TRANSISTOR MODULES Rating and Specifications. Part NO: EVK71-060 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: ......

Mega Source Elec.Limited
China

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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Suppl...

Guangzhou Topfast Technology Co., Ltd.
Guangdong,China

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SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

... Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTI...

Guangdong Uchi Electronics Co.,Ltd
Guangdong,China

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Transistor / Integrated Circuit IC 1.25W Power dissipation 2SD822 / D822

... 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Collector Power Dissipation 1.25 W TJ Junction Temperature 150 °C Tstg Storage Temperature -55-150 °C ELECTRICAL CHARACTERISTICS (T...

Shenzhen Winsun Technology Co., Ltd.
Guangdong,China

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Electronic Integrated Circuits IC Swithing Transistor MMDT2222A (NPN)

...Transistor MMDT2222A (NPN) / Integrated Circuit IC FEATURES: Complementary PNP Type available MMDT2907A Package: SOT-323 MAXIMUM RATINGS (TA=25 °c unless otherwise noted) Symbol Parameter Value Units VCBO Co...

Shenzhen Winsun Technology Co., Ltd.
Guangdong,China

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Transistor / Integrated Circuit IC 1.25W Power dissipation 2SD822 / D822

... 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Collector Power Dissipation 1.25 W TJ Junction Temperature 150 °C Tstg Storage Temperature -55-150 °C ELECTRICAL CHARACTERISTICS (T...

Shenzhen Winsun Technology Co., Ltd.
Guangdong,China

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Electronic Integrated Circuits IC Swithing Transistor MMDT2222A (NPN)

...Transistor MMDT2222A (NPN) / Integrated Circuit IC FEATURES: Complementary PNP Type available MMDT2907A Package: SOT-323 MAXIMUM RATINGS (TA=25 °c unless otherwise noted) Symbol Parameter Value Units VCBO Co...

Shenzhen Winsun Technology Co., Ltd.
Guangdong,China

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Pre Biased NPN 50V 100MA ROHM Semiconductor DTC114TETL Bipolar Transistor

Texas Instruments LM2904DRG4 Operational Amplifier Op Amp Dual General Purpose Op Amp lFeatures 1) Built-In Biasing Resistor 2 ) Built-in bias resistors enable the configuration of an inverter circuit without c...

Shenzhen Hongxinwei Technology Co., Ltd
Guangdong,China

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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safet...

Yingxinyuan Int'l(Group) Ltd.
China

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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safet...

Yingxinyuan Int'l(Group) Ltd.
China

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NSVEMC2DXV5T1G

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) 50V 100mA 500mW Surface Mount SOT-553...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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MBT3946DW1T1G

Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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BC856BDW1T1G

Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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BC857BS,135

Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount 6-TSSOP...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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MMDT2907A-7-F

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 200MHz 200mW Surface Mount SOT-363...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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PMBT3904VS,115

Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 200mA 300MHz 360mW Surface Mount SOT-666...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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