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Bipolar Junction Transistor

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Total 29687 products for bipolar junction transistor Manufacture & Suppliers

Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Automotive IGBT Modules

..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4

..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V C...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Ca...

Wisdtech Technology Co.,Limited
Guangdong,China

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2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

...: TO-3P-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V ......

Wisdtech Technology Co.,Limited
Guangdong,China

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2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole Manufacturer: Toshiba Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: Through Hole Package / Case: TO-3P-3...

Wisdtech Technology Co.,Limited
Guangdong,China

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Low noise broadband bipolar RF transistor Infineon BFP843H6327 robust pre matched for high frequency

...bipolar RF transistor designed for demanding RF applications. It offers excellent performance characteristics suitable for various high-frequency circuits.Product Attributes Brand: Infineon Technologies Prod...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits

BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor The BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent perfor...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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High Linearity Bipolar RF Transistor Silicon Germanium Type Infineon BFP650H6327 with SOT343 Package

BFP650 High Linearity Silicon Germanium Bipolar RF Transistor The BFP650 is a high linearity silicon germanium bipolar RF transistor designed for RF and protection device applications. This datasheet provides d...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740FH6327 Suitable for RF Applications

BFP740F Low Noise Silicon Germanium Bipolar RF Transistor The BFP740F is a low noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteris...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740E6327 for RF Communication Systems

BFP740 Low Noise Silicon Germanium Bipolar RF Transistor The BFP740 is a low noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics, ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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NPN bipolar RF transistor Infineon BF776H6327XTSA1 designed for low noise amplifier applications

...-automotive applications including WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE, and ISM bands. The transistor comes in an easy-to-use standard package with visible leads and is Pb-free (RoHS ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise figure silicon bipolar RF transistor Infineon BFP196WH6327 for broadband amplifier and telecom

...-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Silicon bipolar RF transistor Infineon BFQ19SH6327 optimized for antenna systems and broadband amplifier

...noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers. It is suitable for antenna and telecommunications systems operating up to 1.5 GHz with collector currents rang...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Silicon bipolar epitaxial transistor TOSHIBA HN1B04FU-YLF with 150 milliamp collector current and 50 volt rating

...-Q101 qualified, making it suitable for automotive applications.Product Attributes Brand: Toshiba Type: Silicon PNP/NPN Epitaxial Transistor Certifications:...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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IMYH200R075M1H Integrated Circuit Chip TO-247-4 Silicon Carbide Junction Transistor

... Circuit Chip TO-247-4 Silicon Carbide Junction Transistor Product Description Of IMYH200R075M1H IMYH200R075M1H is CoolSiC™ 2000 V SiC Trench MOSFET, Silicon Carbide Junction Transistor. Specification Of IM...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Silicon Bipolar RF Transistor Infineon BFR380FH6327 with Halogen Free Thin Small Flat Package Design

Product Overview The BFR380F is a high-linearity, low-noise silicon bipolar RF transistor designed for driver amplifier applications. It offers an output compression point of 19.5 dBm at 1.8 GHz and a low noise...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise silicon bipolar RF transistor Infineon BFP410H6327 suitable for high frequency applications

Product Overview The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Pb free silicon bipolar RF transistor Infineon BFP405H6327XTSA1 with 1.25 dB noise figure at 1.8 GHz

Product Overview The BFP405 is a low-noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It offers a minimum noise figure (NFmin) of 1.25 dB at 1.8 GHz and an...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers

Product Overview The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequenc...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain

Product Overview The BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-......

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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