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...Driver Product Name: IPA80R1K0CEXKSA2 Semiconductor IC Chip Product Description: The IPA80R1K0CEXKSA2 is a silicon based high-performance, low power integrated circuit chip. It is designed for use in a wide ...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench tec...
...MOSFET SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power 100% RG Test...
...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High pe...
... Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resis...
SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor Features 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% av...
...MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter...
... MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugg...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
...Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low...
...Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gat...
...Mosfet Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well su...
...making it ideal for high efficiency power management applications. Feature Low On-Resistance Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Gre...
...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge...
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate volt...
...Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5...
...Mosfet Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltag...
...making it ideal for high efficiency power management applications. Feature Low On-Resistance Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Gre...
...MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter...
... MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugg...