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Product Overview The ZXTP25040DFH is a 40V PNP medium power transistor in a SOT23 package. It offers high power dissipation, high peak current, and low saturation voltage, making it suitable for applications su...
... Overview The FMMT495 is a 150V NPN silicon planar medium power transistor in a SOT23 package. It offers a continuous collector current of 1A, a peak pulse current of 2A, and a power dissipation of 500mW. Th...
... are 80V NPN medium power transistors designed for automotive and other applications requiring unique site and control change requirements. They offer high current capability, multiple current gain selection...
Product Overview The FCX493 is a 100V NPN medium power transistor in a SOT89 package. It offers a high continuous current of 1A, low saturation voltage, and is designed for applications such as load management,...
Product Overview The FZT853 is a 100V NPN medium power transistor designed for high performance and reliability. It features a high continuous collector current of 6A, a peak pulse current of 10A, and low satur...
Product Overview The LBTP180Z4TZHG and S-LBTP180Z4TZHG are PNP medium power transistors designed for various applications. They feature high current and low voltage capabilities. The S-prefix variants are AEC-Q...
Product Overview The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, w...
...transistor designed for medium power applications, featuring low saturation voltage. This characteristic leads to very low on-state losses, making it ideal for driving, power management functions, and DC-DC ...
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power ...
...transistor in a SOT-23 package. It is ideal for medium power amplification and switching applications. This NPN transistor is complementary to the MMBT5551.Product Attributes Brand: High Diode Semiconductor ...
... Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and...
...MEDIUM POWER TRANSISTORS) switching power mosfet FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL ZTX653 UNIT Collector-Bas...
Product Overview The TIP32 series are NPN power transistors designed for medium power linear and switching applications. They serve as complements to the TIP31 series, offering robust performance with a TO-220 ...
Product Overview The JTD5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the JTD501, offering reliable performance in its intended use cases.P...
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resis...
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resis...
...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat gen...
...Medium Power Transistor (32V, 500mA) The 2SC2411K is a medium power NPN transistor designed for driving circuits and low-frequency amplification. It features a high maximum collector current (ICMAX) of 0.5A ...
ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR The ZX5T951G is a 60V PNP medium power transistor designed for low saturation applications. It offers a high continuous collector current of -5.5A and a p...
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - L...