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...MOSFET Low ON Resistance For Adapter CS12N65A2 TO-220F Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ CS12N65A2 TO-220F ...
...MOSFET Features: -High voltage capability: VDSS = 400V -Low on-resistance: RDS(ON) = 0.3 Ohm -Low gate charge: Qg = 3.2nC -Low drain-source capacitance: Cd = 1.3pF -Extremely fast switching speeds: tD(ON) = ...
... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching an...
...MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which ...
IRLS3036TRL7PP MOSFET Power Electronics D2PAK Package N-Channel Hard Switched and High Frequency Circuits FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continu...
IRFB3207PBF MOSFET Power Electronics N-Channel Hard Switched High Frequency Circuits Package TO-220 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Dr...
...MOSFET TO-220F Package Fast Switching Applications: The High Power MOSFET is an ideal component for high-power applications, thanks to its high switching speed and superior power handling capabilities. It is...
Integrated Circuit Chip EP5358LUI Step Down DC DC Switching Converter 600mA Product Description Of EP5358LUI EP5358LUI (x = L or H) is rated for up to 600mA of continuous output current. EP5358LUI integrates MO...
LM1951T switching power mosfet amplifier ic chip Power Mosfet Transistor LM1951 Solid State 1 Amp Switch General Description The LM1951 is a high current, high voltage, high side (PNP) switch with a built-in er...
...: IPD50N04S4L-08 has the advantages of low conduction resistance, high switching speed, and low leakage current, which can achieve high efficiency and reliability of power switching. Parameters: Maximum diss...
.... With low power loss and low gate charge, this MOSFET helps to minimize switching loss and reduce power consumption, making it an ideal choice for power management applications. Made from high-quality silic...
...MOSFET commonly used in high-speed switching circuits, DC power supplies, inverters, automotive electronics, and other fields. Conclusion: IPD50N04S4L-08 has the characteristics of low conduction resistance,...
... EFFICIENCY SWITCH • Motor driven • Ammeter • UPS power Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high-tech enterprise that ......
... 4A SOT23-3L -30V, -4A, P-channel MOSFET Diodes and Rectifiers The AO3401A/L uses advanced trench technology to provideexcellent RDS(ON) , low gate charge and operation gatevoltages as low as 2.5V. This devi...
... an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in clas...
...MOSFET 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requi...
STP65NF06 N-Channel Power MOSFET 60V 60A 110W (Tc) Through Hole Switching application Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based proc...
...MOSFET 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requi...
STP65NF06 N-Channel Power MOSFET 60V 60A 110W (Tc) Through Hole Switching application Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based proc...
...Circuits Infineon IRF1405STRLPBF MOSFET Typical Applications Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. ...