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BSS123LT1G N-Channel MOSFET Low 170mandOmega; RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection andnbsp; Features ...
...MOSFET Transistor for Adaptors Application Technology Product Description: High Voltage MOSFET is a kind of MOSFET transistor designed for high voltage application. It is suitable for Motor Series, Inverter,...
...ideal for use in battery-powered devices that require low power consumption. This MOSFET also offers high switching speeds and low gate charge, making it suitable for use in Digital Logic Circuits. Additiona...
...MOSFETs Transistors Product Description Of IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Power MOSFETs are superjunction MOSFETs that address xEV applications where MOSFETs are switched at low frequency. Specification...
...MOSFET POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET® MOSFET TECHNOLOGY Product ...
... to the superjunction (SJ) principle pioneered. Specification Of IPDQ60R040S7A Part Number IPDQ60R040S7A Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage 600 V...
...tems andnbsp; Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy ...
... for small designs through high efficiency and integrated high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and by selecting a hi...
...Circuits TPS22919DCKT SC70-6 Power Distribution Product Description: The TPS22919 device is a small, single channel load switch with controlled slew rate. The device contains an N-channel MOSFET that can ope...
...MOSFET 30V 13A 2.5W Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi...
IRFR9024NTRPBF P-Channel MOSFET 55V 11A 38W Surface Mount D-Pak Features: Ultra Low On-Resistance P-Channel Surface Mount Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free RoHS Complian...
...MOSFET 30V 13A 2.5W Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi...
...MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for high-voltage, high-current, high-speed switching and high-efficiency powe...
...MOSFET Driver For High Frequency And Narrow Pulse Applications Product Description Of LMG1025QDEETQ1 The LMG1025QDEETQ1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for...
...MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for high-voltage, high-current, high-speed switching and high-efficiency powe...
...MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; O...
...resistance andbull; Fast switching speed andbull; Low threshold andbull; Low gate drive andbull; DPAK package andnbsp; Applications andbull; DC-DC converters andbull; Power management functions andbull; Disc...
..., Bridge Drivers - External Switch Series - Packaging Tube Configuration High and Low Side, Synchronous Input Type Inverting Delay Time 18ns Current - Peak ......
... MOSFET Driver Specifications: Datasheets NCP5355 Product Photos 8-SOIC Product Change Notification Product Discontinuation 01/Oct/2008 Standard Package 2,500 Category Integrated Circuits (ICs) Family PMIC -...
... Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Features : 1) Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A 2) Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A 3) ...