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Electronic Components Trans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 T/R STR2N2VH5 Integrated Circuits Applications : Switching applications Description : This device is an N-channel Power MOSFET developed using STMic...
Electronic Components Trans MOSFET N-CH 20V 2.3A 3-Pin SOT-23 T/R STR2N2VH5 Integrated Circuits Applications : Switching applications Description : This device is an N-channel Power MOSFET developed using STMic...
... Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Features : 1) Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A 2) Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A 3) ...
...MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per...
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) ...
...MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg 1. Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifi...
STP12NM50 ST MOSFET N-Ch 500 Volt 12 Amp Switching applications 1.Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 2.Description These N-channel Power MOSFETs are d...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche ratin...
...Switching High Efficiency (Up to 95%) Internal Compensation Power Good Signal Thermal/UVLO Protection SOIC-8 Package andnbsp; Features andbull; Wide input voltage range:andndash;TPS5430: 5.5V to 36Vandndash;...
... build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET of...
...MOSFETs NTH4L022N120M3S N-Channel 1200V 68A 352W Through Hole TO-247-4L Product Description Of NTH4L022N120M3S NTH4L022N120M3S Silicon Carbide (SiC) MOSFETs are a family of 1200V M3S planar SiC MOSFETs. The ...
...MOSFET High Performance High Efficiency Low RDS(ON) Power Electronics Product Listing: IRLML0100TRPBF MOSFET Product Description: This is an N-Channel Power MOSFET designed for low voltage, high current swit...
...MOSFET Power Electronics Product Description: The IRF6215STRLPBF is a power MOSFET that provides superior performance and reliability in a variety of applications. Featuring low input capacitance and fast sw...
...MOSFET Power Electronics Description: NVMFS5113PLT1G is a MOSFET Power Electronics device. It is a power transistor, a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that can be used to c...
... and provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide sy...
STMPS2272MTR Enhanced Power Switch High Speed Switching Diode Features ■ 80mΩ HIGH-SIDE MOSFET SWITCH ■ 1000mA CONTINUOUS CURRENT PER CHANNEL ■ INDEPENDENT THERMAL AND SHORTCIRCUIT PROTECTION WITH OVERCURRENT L...
Integrated Circuit Chip NTMFS4C55NT1G NTMFS4C55 MOSFET Transistor DFN5 Features Pulse Test: pulse width300 us, duty cycle2%. Switching characteristics are independent of operating junction temperatures. Surfa...
... to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−......
Integrated Circuit Chip NTMFS4C09NT1G MOSFET N-Channel Transistors 8-PowerTDFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minim...
...Circuit Chip NTMFS4C024NT1G N-Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Lo...