Total 18685 products for p type silicon wafer Manufacture & Suppliers

• On Diamond Gallium Nitride Wafer Epitaxial HEMT And Bonding

  

  ...wafers for Thermal management area According to statistics, the temperature of the working junction will drop Low 10 ° C can double the device life. The thermal conductivity of diamond is 3 to 3 higher than ...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• Semiconductor Gallium Nitride Wafer , GaN Substrate Template N - Type 2 Inch

  

  2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gall...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• High Purity Silicon Carbide (SiC) Powder for Industrial and Ceramic Applications

  

  High Purity Silicon Carbide (SiC) Powder for Industrial and Ceramic Applications Introduction of Silicon Carbide Power: Silicon carbide powder (SiC) is an abrasive material that is made by heating silicon and c...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• LNOI Wafer Lithium Niobate On Insulator 2/3/4/6/8 Inch LN Substrate​

  

  ...Wafer (Lithium Niobate on Insulator)2/3/4/6/8 Inch Si/LN Substrate Introduction of LNOI Wafer LNOI (Lithium Niobate on Insulator) wafers are a cutting-edge material used in the development of advanced photon...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• Quartz Wafer Quartz Wafers 2" 3" 4" 6" 8" 12" SiO₂ Semiconductor Optical

  

  ...₂). The unique properties of quartz make it an essential material in various high-tech industries. Quartz wafers exhibit excellent characteristics such as high thermal resistance, superior light transmission...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• Lithium Tantalate on Insulator (LTOI) Wafers for TC-SAW Filters and 5G RF Front-End Applications

  

  ...wafers are engineered piezoelectric thin-film substrates developed for next-generation acoustic wave devices, particularly Temperature-Compensated Surface Acoustic Wave (TC-SAW) filters used in modern RF fro...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• High-Precision Alumina Ceramic Wafer Loading Arm High purity silicon carbide arm for wafer moving

  

  ... chips to the specified location. Because the wafer silicon chip is extremely vulnerable to other particles, it is generally carried out in a vacuum environment. In this environment, the robotic arm of most ...

  Zhuhai Cersol Technology Co, Ltd

  Guangdong

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• dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer

  

  ...semconductor ,sic single crystal wafers ,sic ingots for gem​ About SiC Crystal Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a semiconductor containing silicon and carbon with chemical...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• Refractory Shock Proof Silicon Nitride Si3N4 Ceramic Wafer

  

  ...Silicon Nitride Si3N4 Ceramic Wafer The specification of the Si3N4 Ceramic wafer 1. The typical thickness of the silicon nitride substrate covers 0.30mm, 0.5mm, 0.635mm, 1.0mm 2. We are supplying with many r...

  Jinghui Industry Limited

  Guangdong,China

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• 316SS Disc 410SS Stem Wafer Butterfly Valve DN100 Dual Drilled Cast Iron Body

  

  ...Wafer butterfly valves General purpose, resilient seated butterfly valve, wafer design (dual drilled Ansi 150/AS Table E), cast iron body, 316SS disc, 410SS stem, EPDM or NBR seat, gear operated. Rated up to...

  TOBO STEEL GROUP CHINA

  Shanghai,China

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• EPDM Seat Wafer Butterfly Valve 316SS Body / Dis / Steam

  

  ... (304SS). Rated 16 bar Sizes- 1½” (DN40)→ 12″ (DN300) * Options: Various seats includingNBR, viton, neoprene, EPT, silicon, hypalon. 304SS stem, WCB or 304SS Body, Gear Operator (304SS) A Butterfly valve is ...

  TOBO STEEL GROUP CHINA

  Shanghai,China

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• SSP Germanium Semiconductor Substrate Ge Wafers For Infrared Band 100 / 110 2 Inch

  

  ...germanium wafers, which is short for Ge wafers grown by VGF / LEC. Lightly doped P and N-type Germanium wafers can be also used for the Hall effect experiments. At room temperature, crystalline germanium is ...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• N Type 4inch Dia100mm Free Standing HVPE GaN Gallium Nitride Wafer

  

  ... several types of devices; the primary GaN devices are LEDs, laser diodes, power electronics, and RF devices. GaN is ideal for LEDs because of the direct ......

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices

  

  ... Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging fr...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• 6Inch Silicon Carbide Semi-insulating SiC Composite Substrate P Type N Type Single Polish Double Polish Production Grade

  

  ... wafers are a new type of substrate materials for power electronics and RF microwave devices. Semi-insulating SiC composite substrates are widely used in power ......

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• Wafer Bonder Equipment Room Temperature Bonding Hydrophilic Bonding For 4 6 8 12inch SiC-Si SiC-SiC

  

  ...silicon carbide (SiC) wafers, supporting both room temperature bonding and hydrophilic bonding techniques. It is capable of handling wafers of 4-inch, 6-inch, 8-inch, and 12-inch sizes, and is optimized for ...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• Fully Automatic Wafer Thinning Machine Si SiC GaN Ultra-thin Wafer Grinding

  

  ... machine ensures high uniformity and surface quality, making it suitable for materials such as silicon, GaAs, GaN, and SiC. It plays an essential role in applications like power devices, MEMS, and CMOS image...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• VGF Method Gaas Wafer Dia 150mm Semi - Insulating Type For Microelectronics

  

  ... GaAs) Gallium Arsenide Wafers Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. ......

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• 3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics

  

  ... GaAs) Gallium Arsenide Wafers Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. ......

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate

  

  ... for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade of 4H n -type silicon carbide (SiC) wafers. Reliable and Read...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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